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HL6339G PDF预览

HL6339G

更新时间: 2024-01-22 20:28:35
品牌 Logo 应用领域
瑞萨 - RENESAS 光电半导体
页数 文件大小 规格书
5页 64K
描述
633nm, LASER DIODE, LD/G2, 3 PIN

HL6339G 技术参数

生命周期:Transferred包装说明:LD/G2, 3 PIN
Reach Compliance Code:unknown风险等级:5.02
Is Samacsys:N配置:SINGLE WITH BUILT-IN PHOTO DIODE
功能数量:1最高工作温度:40 °C
最低工作温度:-10 °C光电设备类型:LASER DIODE
标称输出功率:5 mW峰值波长:633 nm
形状:ROUND尺寸:2 mm
最大阈值电流:60 mABase Number Matches:1

HL6339G 数据手册

 浏览型号HL6339G的Datasheet PDF文件第2页浏览型号HL6339G的Datasheet PDF文件第3页浏览型号HL6339G的Datasheet PDF文件第4页浏览型号HL6339G的Datasheet PDF文件第5页 
HL6339G  
633nm Lasing Laser Diode  
ADE-208-1434 (Z)  
Preliminary  
Rev.0  
Jun. 2001  
Description  
The HL6339G is 0.63 µm band AlGaInP laser diode with a multi-quantum well (MQW) structure. Lasing  
wavelength of this laser is nearly equal to the wavelength of He-Ne gas laser. They are suitable as light  
sources for laser levelers, laser scanners and optical equipment for measurement.  
Application  
Laser analysis systems  
Laser scanner  
Measurement  
Features  
Visible light output  
: 633 nm Typ (nearly equal to He-Ne gas laser)  
Optical output power : 5 mW CW  
Operating current  
: 55 mA Typ  
TM mode oscillation  
Internal Circuit  
Package Type  
HL6339G: G2  
1
3
LD  
PD  
2

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