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HL6339G PDF预览

HL6339G - RENESAS TECHNOLOGY CORP

光电半导体
型号:
HL6339G
Datasheet下载:
HL6339G
HL6339G描述:
633nm, LASER DIODE, LD/G2, 3 PIN
HL6339G应用:
光电半导体
文档页数/大小:
5页 / 64K
品牌Logo:
品牌名称:
RENESAS [ RENESAS TECHNOLOGY CORP ]

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HL6339G

应用: 光电半导体

文档: 5页 / 64K

品牌: RENESAS

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  • HL6339G参数
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生命周期
Transferred
IHS 制造商
RENESAS TECHNOLOGY CORP
包装说明
LD/G2, 3 PIN
Reach Compliance Code
unknown
风险等级
5.02
Is Samacsys
N
配置
SINGLE WITH BUILT-IN PHOTO DIODE
功能数量
1
最高工作温度
40 °C
最低工作温度
-10 °C
光电设备类型
LASER DIODE
标称输出功率
5 mW
峰值波长
633 nm
形状
ROUND
尺寸
2 mm
最大阈值电流
60 mA
Base Number Matches
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HL6339G
633nm Lasing Laser Diode
ADE-208-1434 (Z)
Preliminary
Rev.0
Jun. 2001
Description
The HL6339G is 0.63
µm
band AlGaInP laser diode with a multi-quantum well (MQW) structure. Lasing
wavelength of this laser is nearly equal to the wavelength of He-Ne gas laser. They are suitable as light
sources for laser levelers, laser scanners and optical equipment for measurement.
Application
Laser analysis systems
Laser scanner
Measurement
Features
Visible light output
Optical output power
Operating current
TM mode oscillation
Package Type
HL6339G: G2
Internal Circuit
1
3
: 633 nm Typ (nearly equal to He-Ne gas laser)
: 5 mW CW
: 55 mA Typ
PD
LD
2

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