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2SJ575 PDF预览

2SJ575

更新时间: 2024-02-08 00:53:11
品牌 Logo 应用领域
瑞萨 - RENESAS 晶体开关小信号场效应晶体管光电二极管
页数 文件大小 规格书
10页 163K
描述
Silicon P Channel MOS FET High Speed Switching

2SJ575 技术参数

生命周期:Obsolete包装说明:SMALL OUTLINE, R-PDSO-G3
针数:3Reach Compliance Code:unknown
ECCN代码:EAR99风险等级:5.37
Is Samacsys:N配置:SINGLE WITH BUILT-IN DIODE
最小漏源击穿电压:30 V最大漏极电流 (Abs) (ID):0.1 A
最大漏极电流 (ID):0.1 A最大漏源导通电阻:7.9 Ω
FET 技术:METAL-OXIDE SEMICONDUCTORJESD-30 代码:R-PDSO-G3
元件数量:1端子数量:3
工作模式:ENHANCEMENT MODE最高工作温度:150 °C
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:P-CHANNEL
最大功率耗散 (Abs):0.4 W认证状态:Not Qualified
子类别:Other Transistors表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

2SJ575 数据手册

 浏览型号2SJ575的Datasheet PDF文件第2页浏览型号2SJ575的Datasheet PDF文件第3页浏览型号2SJ575的Datasheet PDF文件第4页浏览型号2SJ575的Datasheet PDF文件第5页浏览型号2SJ575的Datasheet PDF文件第6页浏览型号2SJ575的Datasheet PDF文件第7页 
To all our customers  
Regarding the change of names mentioned in the document, such as Hitachi  
Electric and Hitachi XX, to Renesas Technology Corp.  
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas  
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog  
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)  
Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand  
names are mentioned in the document, these names have in fact all been changed to Renesas  
Technology Corp. Thank you for your understanding. Except for oporate trademark, logo and  
corporate statement, no changes whatsoever have been made to of the document, and  
these changes do not constitute any alteration to the contenelf.  
Renesas Technology Home Pcom  
Renesas Technology Corp.  
Customer Support Dept.  
April 1, 2003  

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