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2SJ551S-E PDF预览

2SJ551S-E

更新时间: 2024-02-15 16:38:00
品牌 Logo 应用领域
瑞萨 - RENESAS 晶体晶体管场效应晶体管
页数 文件大小 规格书
9页 95K
描述
18A, 60V, 0.11ohm, P-CHANNEL, Si, POWER, MOSFET, LDPAK-3

2SJ551S-E 技术参数

是否Rohs认证:符合生命周期:Not Recommended
零件包装代码:LDPAK(S)-(1)包装说明:,
针数:4Reach Compliance Code:compliant
风险等级:5.76Is Samacsys:N
峰值回流温度(摄氏度):NOT SPECIFIED处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

2SJ551S-E 数据手册

 浏览型号2SJ551S-E的Datasheet PDF文件第2页浏览型号2SJ551S-E的Datasheet PDF文件第3页浏览型号2SJ551S-E的Datasheet PDF文件第4页浏览型号2SJ551S-E的Datasheet PDF文件第5页浏览型号2SJ551S-E的Datasheet PDF文件第6页浏览型号2SJ551S-E的Datasheet PDF文件第7页 
2SJ551(L), 2SJ551(S)  
Silicon P Channel MOS FET  
REJ03G0898-0400  
(Previous: ADE-208-647B)  
Rev.4.00  
Sep 07, 2005  
Description  
High speed power switching  
Features  
Low on-resistance  
RDS (on) = 0.050 typ.  
Low drive current.  
4 V gate drive devices.  
High speed switching.  
Outline  
RENESAS Package code: PRSS0004AE-A  
(Package name: LDPAK (L) )  
RENESAS Package code: PRSS0004AE-B  
(Package name: LDPAK (S)-(1) )  
D
4
4
1. Gate  
2. Drain  
3. Source  
4. Drain  
G
1
2
3
1
2
3
S
Rev.4.00 Sep 07, 2005 page 1 of 8  

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