2SJ530L-E

更新时间： 2024-02-17 05:23:17

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2SJ530L-E 数据手册

2SJ530(L), 2SJ530(S)

Silicon P Channel MOS FET

REJ03G0880-0500

(Previous: ADE-208-655C)

Rev.5.00

Sep 07, 2005

Description

High speed power switching

Features

•

Low on-resistance

R_{DS (on)}= 0.08 Ω typ.

4 V gate drive devices.

High speed switching.

•

Outline

RENESAS Package code: PRSS0004ZD-B

RENESAS Package code: PRSS0004ZD-C

(Package name: DPAK (L)-(2) )

(Package name: DPAK (S) )

1. Gate

2. Drain

3. Source

4. Drain

Rev.5.00 Sep 07, 2005 page 1 of 8

12 3 4 5 6 7...9

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