2SJ529L-E

更新时间： 2024-02-18 03:31:51

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2SJ529L-E 数据手册

2SJ529(L), 2SJ529(S)

Silicon P Channel MOS FET

REJ03G0879-0300

(Previous: ADE-208-654A)

Rev.3.00

Sep 07, 2005

Description

High speed power switching

Features

•

Low on-resistance

R_{DS (on)}= 0.12 Ω typ.

4 V gate drive devices

High speed switching

•

Outline

RENESAS Package code: PRSS0004ZD-B

RENESAS Package code: PRSS0004ZD-C

(Package name: DPAK (L)-(2) )

(Package name: DPAK (S) )

1. Gate

2. Drain

3. Source

4. Drain

Rev.3.00 Sep 07, 2005 page 1 of 8

12 3 4 5 6 7...9

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型号	品牌	描述	获取价格	数据表
2SJ529S	RENESAS	Silicon P Channel MOS FET	获取价格
2SJ529S	KEXIN	Hight Speed Power Switching	获取价格
2SJ529S	HITACHI	Silicon P Channel MOS FET High Speed Power Switching	获取价格
2SJ529S-E	RENESAS	10A, 60V, 0.24ohm, P-CHANNEL, Si, POWER, MOSFET, DPAK-3	获取价格
2SJ529STL-E	RENESAS	Silicon P Channel MOS FET	获取价格
2SJ529STR-E	RENESAS	Pch Single Power MOSFET -60V -10A 160mohm DPAK(S)/TO-252	获取价格