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2SJ486ZU-TR-E PDF预览

2SJ486ZU-TR-E

更新时间: 2024-01-21 03:16:11
品牌 Logo 应用领域
瑞萨 - RENESAS 晶体小信号场效应晶体管开关光电二极管ISM频段
页数 文件大小 规格书
7页 79K
描述
Silicon P Channel MOS FET

2SJ486ZU-TR-E 技术参数

生命周期:Transferred包装说明:SMALL OUTLINE, R-PDSO-G3
Reach Compliance Code:unknownECCN代码:EAR99
风险等级:5.28配置:SINGLE
最小漏源击穿电压:30 V最大漏极电流 (ID):0.3 A
最大漏源导通电阻:1.2 ΩFET 技术:METAL-OXIDE SEMICONDUCTOR
JESD-30 代码:R-PDSO-G3元件数量:1
端子数量:3工作模式:ENHANCEMENT MODE
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE极性/信道类型:P-CHANNEL
认证状态:Not Qualified表面贴装:YES
端子形式:GULL WING端子位置:DUAL
晶体管应用:SWITCHING晶体管元件材料:SILICON
Base Number Matches:1

2SJ486ZU-TR-E 数据手册

 浏览型号2SJ486ZU-TR-E的Datasheet PDF文件第2页浏览型号2SJ486ZU-TR-E的Datasheet PDF文件第3页浏览型号2SJ486ZU-TR-E的Datasheet PDF文件第4页浏览型号2SJ486ZU-TR-E的Datasheet PDF文件第5页浏览型号2SJ486ZU-TR-E的Datasheet PDF文件第6页浏览型号2SJ486ZU-TR-E的Datasheet PDF文件第7页 
2SJ486  
Silicon P Channel MOS FET  
REJ03G0869-0300  
(Previous: ADE-208-512A)  
Rev.3.00  
Sep 07, 2005  
Description  
Low frequency power switching  
Features  
Low on-resistance  
RDS (on) = 0.5 typ. (at VGS = –4 V, ID = –100 mA)  
2.5 V gate drive devices.  
Small package (MPAK).  
Outline  
RENESAS Package code: PLSP0003ZB-A  
(Package name: MPAK)  
D
3
1. Source  
2. Gate  
3. Drain  
G
1
2
S
Note: Marking is “ZU–”.  
Rev.3.00 Sep 07, 2005 page 1 of 6  

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