生命周期: | Obsolete | 包装说明: | FLANGE MOUNT, R-PSFM-T3 |
Reach Compliance Code: | unknown | ECCN代码: | EAR99 |
HTS代码: | 8541.29.00.95 | 风险等级: | 5.67 |
Is Samacsys: | N | 外壳连接: | COLLECTOR |
最大集电极电流 (IC): | 15 A | 集电极-发射极最大电压: | 40 V |
配置: | SINGLE | 最小直流电流增益 (hFE): | 5 |
JEDEC-95代码: | TO-220AB | JESD-30 代码: | R-PSFM-T3 |
元件数量: | 1 | 端子数量: | 3 |
最高工作温度: | 150 °C | 封装主体材料: | PLASTIC/EPOXY |
封装形状: | RECTANGULAR | 封装形式: | FLANGE MOUNT |
极性/信道类型: | NPN | 功耗环境最大值: | 57 W |
认证状态: | Not Qualified | 表面贴装: | NO |
端子形式: | THROUGH-HOLE | 端子位置: | SINGLE |
晶体管应用: | SWITCHING | 晶体管元件材料: | SILICON |
VCEsat-Max: | 3.5 V | Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
2N6486-DR6269 | RENESAS | 15A, 40V, NPN, Si, POWER TRANSISTOR, TO-220AB |
获取价格 |
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2N6486-DR6274 | RENESAS | Power Bipolar Transistor, 15A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast |
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2N6486-DR6280 | RENESAS | Power Bipolar Transistor, 15A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast |
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2N6486E3 | MICROSEMI | Power Bipolar Transistor, 15A I(C), 40V V(BR)CEO, NPN, Silicon, TO-220, Plastic/Epoxy, 3 P |
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2N6486LEADFREE | CENTRAL | Power Bipolar Transistor, 15A I(C), 40V V(BR)CEO, 1-Element, NPN, Silicon, TO-220AB, Plast |
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2N6487 | MOSPEC | POWER TRANSISTORS(15A,75W) |
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