Datasheet > 1SS305-A

1SS305-A

更新时间： 2024-02-13 01:12:23

品牌	Logo	应用领域
瑞萨 - RENESAS		光电二极管
页数	文件大小	规格书
4页	51K
描述
0.1A, SILICON, SIGNAL DIODE

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技术参数
数据手册

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1SS305-A 技术参数

生命周期：	Transferred	包装说明：	R-PDSO-G3
Reach Compliance Code：	unknown	ECCN代码：	EAR99
HTS代码：	8541.10.00.70	风险等级：	5.6
配置：	SINGLE	二极管元件材料：	SILICON
二极管类型：	RECTIFIER DIODE	JESD-30 代码：	R-PDSO-G3
元件数量：	1	端子数量：	3
最大输出电流：	0.1 A	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	SMALL OUTLINE
峰值回流温度（摄氏度）：	NOT SPECIFIED	认证状态：	Not Qualified
最大反向恢复时间：	0.003 µs	表面贴装：	YES
端子形式：	GULL WING	端子位置：	DUAL
处于峰值回流温度下的最长时间：	NOT SPECIFIED	Base Number Matches：	1

1SS305-A 数据手册

DATA SHEET

SILICON SWITCHING DIODE

1SS305

HIGH SPEED SWITCHING

SILICON EPITAXIAL DIODE

FEATURES

• Low capacitance: C^t= 4.0 pF MAX.

PACKAGE DIMENSIONS (Unit: mm)

• High speed switching: t^rr= 3.0 ns MAX.

2.1±0.1

• Wide applications including switching, limitter, clipper.

1.25±0.1

ABSOLUTE MAXIMUM RATINGS

Maximum Voltages and Currents (T^A= 25°C)

Peak Reverse Voltage

DC Reverse Voltage

V^RM

V^R

I^FM

I^O

100

300

100

Peak Forward Current

Average Rectified Current

DC Forward Current

Marking

I^F

Maximum Temperatures

Junction Temperature

Storage Temperature Range

Thermal Resistance

T^j

150

°C

T^stg

–55 to + 150

CONNECTION DIAGRAM (Top View)

Junction to Ambient

R^th(j-a)

0.85

°C/mW

1. N.C.

2. Anode

3. Cathode

Marking : A14

ELECTRICAL CHARACTERISTICS (T^A= 25°C)

CHARACTERISTICS

SYMBOL

TEST CONDITIONS

MIN. TYP. MAX. UNIT

Forward Voltage

V^F1

V^F2

V^F3

I^R

I^F= 10 mA

720

850

950

850

1000

1200

1.0

µA

I^F= 50 mA

I^F= 100 mA

Reverse Current

Capacitance

V^R= 100 V

C^t

V^R= 0 V, f = 1.0 MHz

2.0

4.0

Reverse Recovery Time

t^rr

I^F= 10 mA, V^R= 6 V, R^L= 100 Ω,

3.0

See Test Circuit.

The information in this document is subject to change without notice. Before using this document, please

confirm that this is the latest version.

Not all devices/types available in every country. Please check with local NEC representative for

availability and additional information.

Document No. D16310EJ2V0DS00 (2nd edition)

1987

(Previous No. DC-2102)

Date Published July 2002 NS CP(K)

Printed in Japan

12 3 4

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