Datasheet > 1S2208(B)

1S2208(B)

更新时间： 2024-02-19 04:24:46

品牌	Logo	应用领域
瑞萨 - RENESAS		二极管
页数	文件大小	规格书
4页	218K
描述
VHF-UHF BAND, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE

阅读下载

获取价格

如果您发现信息不准确，欢迎纠错

1S2208(B) 技术参数

生命周期：	Obsolete	Reach Compliance Code：	unknown
风险等级：	5.83	其他特性：	HIGH RELIABILITY, MATCHED SETS AVAILABLE
配置：	SINGLE	二极管电容容差：	2%
最小二极管电容比：	4.5	二极管元件材料：	SILICON
二极管类型：	VARIABLE CAPACITANCE DIODE	频带：	VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY
JESD-30 代码：	R-PDIP-T2	元件数量：	1
端子数量：	2	封装主体材料：	PLASTIC/EPOXY
封装形状：	RECTANGULAR	封装形式：	IN-LINE
认证状态：	Not Qualified	表面贴装：	NO
端子形式：	THROUGH-HOLE	端子位置：	DUAL
变容二极管分类：	HYPERABRUPT	Base Number Matches：	1

To our customers,

Old Company Name in Catalogs and Other Documents

On April 1^st, 2010, NEC Electronics Corporation merged with Renesas Technology

Corporation, and Renesas Electronics Corporation took over all the business of both

companies. Therefore, although the old company name remains in this document, it is a valid

Renesas Electronics document. We appreciate your understanding.

Renesas Electronics website: http://www.renesas.com

April 1^st, 2010

Renesas Electronics Corporation

Issued by: Renesas Electronics Corporation (http://www.renesas.com)

Send any inquiries to http://www.renesas.com/inquiry.

12 3 4

下载PDF

型号	品牌	描述	获取价格	数据表
1S2209(B)	RENESAS	VHF-UHF BAND, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE	获取价格
1S2209(B)	NEC	Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, Silicon, Hyperabr	获取价格
1S2222	NEC	Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, 0.8pF C(T), Silic	获取价格
1S223	ASI	Zener Diode	获取价格
1S2236	TOSHIBA	SILICON EPITAXIAL PLANAR TYPE VARIABLE CAPACITANCE DIODE	获取价格
1S224	ETC	Analog IC	获取价格