生命周期: | Obsolete | Reach Compliance Code: | unknown |
风险等级: | 5.84 | 其他特性: | HIGH RELIABILITY |
配置: | SINGLE | 最小二极管电容比: | 2.2 |
二极管元件材料: | SILICON | 二极管类型: | VARIABLE CAPACITANCE DIODE |
频带: | VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY | JESD-30 代码: | R-PDIP-T2 |
元件数量: | 1 | 端子数量: | 2 |
封装主体材料: | PLASTIC/EPOXY | 封装形状: | RECTANGULAR |
封装形式: | IN-LINE | 认证状态: | Not Qualified |
表面贴装: | NO | 端子形式: | THROUGH-HOLE |
端子位置: | DUAL | 变容二极管分类: | HYPERABRUPT |
Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
1S2207(B)LC | RENESAS | VHF-UHF BAND, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE |
获取价格 |
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1S2207(B)MC | NEC | Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, Silicon, Hyperabr |
获取价格 |
|
1S2208(B) | RENESAS | VHF-UHF BAND, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE |
获取价格 |
|
1S2208(B) | NEC | Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, Silicon, Hyperabr |
获取价格 |
|
1S2209(B) | RENESAS | VHF-UHF BAND, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE |
获取价格 |
|
1S2209(B) | NEC | Variable Capacitance Diode, Very High Frequency to Ultra High Frequency, Silicon, Hyperabr |
获取价格 |