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1S2207(B)KC PDF预览

1S2207(B)KC

更新时间: 2024-02-02 07:12:45
品牌 Logo 应用领域
瑞萨 - RENESAS 二极管
页数 文件大小 规格书
4页 224K
描述
VHF-UHF BAND, SILICON, HYPERABRUPT VARIABLE CAPACITANCE DIODE

1S2207(B)KC 技术参数

生命周期:ObsoleteReach Compliance Code:unknown
风险等级:5.84其他特性:HIGH RELIABILITY
配置:SINGLE最小二极管电容比:2.2
二极管元件材料:SILICON二极管类型:VARIABLE CAPACITANCE DIODE
频带:VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCYJESD-30 代码:R-PDIP-T2
元件数量:1端子数量:2
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:IN-LINE认证状态:Not Qualified
表面贴装:NO端子形式:THROUGH-HOLE
端子位置:DUAL变容二极管分类:HYPERABRUPT
Base Number Matches:1

1S2207(B)KC 数据手册

 浏览型号1S2207(B)KC的Datasheet PDF文件第2页浏览型号1S2207(B)KC的Datasheet PDF文件第3页浏览型号1S2207(B)KC的Datasheet PDF文件第4页 
To our customers,  
Old Company Name in Catalogs and Other Documents  
On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology  
Corporation, and Renesas Electronics Corporation took over all the business of both  
companies. Therefore, although the old company name remains in this document, it is a valid  
Renesas Electronics document. We appreciate your understanding.  
Renesas Electronics website: http://www.renesas.com  
April 1st, 2010  
Renesas Electronics Corporation  
Issued by: Renesas Electronics Corporation (http://www.renesas.com)  
Send any inquiries to http://www.renesas.com/inquiry.  

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