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1N5230BTA PDF预览

1N5230BTA

更新时间: 2024-02-26 07:05:50
品牌 Logo 应用领域
瑞萨 - RENESAS 测试二极管
页数 文件大小 规格书
9页 124K
描述
4.7V, 0.5W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35, GLASS PACKAGE-2

1N5230BTA 技术参数

生命周期:Transferred零件包装代码:DO-35
包装说明:O-LALF-W2针数:2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5
外壳连接:ISOLATED配置:SINGLE
二极管元件材料:SILICON二极管类型:ZENER DIODE
JEDEC-95代码:DO-204AHJESD-30 代码:O-LALF-W2
膝阻抗最大值:1900 Ω元件数量:1
端子数量:2最高工作温度:200 °C
最低工作温度:-65 °C封装主体材料:GLASS
封装形状:ROUND封装形式:LONG FORM
极性:UNIDIRECTIONAL最大功率耗散:0.5 W
认证状态:Not Qualified标称参考电压:4.7 V
最大反向电流:5 µA表面贴装:NO
技术:ZENER端子形式:WIRE
端子位置:AXIAL电压温度Coeff-Max:1.41 mV/ °C
最大电压容差:5%工作测试电流:20 mA
Base Number Matches:1

1N5230BTA 数据手册

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To all our customers  
Regarding the change of names mentioned in the document, such as Hitachi  
Electric and Hitachi XX, to Renesas Technology Corp.  
The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas  
Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog  
and discrete devices, and memory chips other than DRAMs (flash memory, SRAMs etc.)  
Accordingly, although Hitachi, Hitachi, Ltd., Hitachi Semiconductors, and other Hitachi brand  
names are mentioned in the document, these names have in fact all been changed to Renesas  
Technology Corp. Thank you for your understanding. Except for our corporate trademark, logo and  
corporate statement, no changes whatsoever have been made to the contents of the document, and  
these changes do not constitute any alteration to the contents of the document itself.  
Renesas Technology Home Page: http://www.renesas.com  
Renesas Technology Corp.  
Customer Support Dept.  
April 1, 2003  

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