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REF3225AMDBVREP PDF预览

REF3225AMDBVREP

更新时间: 2024-11-26 12:14:07
品牌 Logo 应用领域
德州仪器 - TI /
页数 文件大小 规格书
25页 890K
描述
4 ppm100 A SOT23-6 SERIES VOLTAGE REFERENCES

REF3225AMDBVREP 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Not Recommended零件包装代码:SOT-23
包装说明:LSSOP, TSOP6,.11,37针数:6
Reach Compliance Code:compliantECCN代码:EAR99
HTS代码:8542.39.00.01风险等级:5.49
模拟集成电路 - 其他类型:THREE TERMINAL VOLTAGE REFERENCEJESD-30 代码:R-PDSO-G6
JESD-609代码:e4长度:2.9 mm
湿度敏感等级:2功能数量:1
输出次数:1端子数量:6
最高工作温度:125 °C最低工作温度:-55 °C
最大输出电流:0.01 A最大输出电压:2.505 V
最小输出电压:2.495 V标称输出电压:2.5 V
封装主体材料:PLASTIC/EPOXY封装代码:LSSOP
封装等效代码:TSOP6,.11,37封装形状:RECTANGULAR
封装形式:SMALL OUTLINE, LOW PROFILE, SHRINK PITCH峰值回流温度(摄氏度):260
认证状态:Not Qualified座面最大高度:1.45 mm
子类别:Voltage References最大供电电流 (Isup):0.12 mA
最大供电电压 (Vsup):5.5 V最小供电电压 (Vsup):2.55 V
标称供电电压 (Vsup):5 V表面贴装:YES
技术:CMOS最大电压温度系数:40 ppm/ °C
温度等级:MILITARY端子面层:Nickel/Palladium/Gold (Ni/Pd/Au)
端子形式:GULL WING端子节距:0.95 mm
端子位置:DUAL处于峰值回流温度下的最长时间:NOT SPECIFIED
微调/可调输出:NO最大电压容差:0.2%
宽度:1.6 mmBase Number Matches:1

REF3225AMDBVREP 数据手册

 浏览型号REF3225AMDBVREP的Datasheet PDF文件第2页浏览型号REF3225AMDBVREP的Datasheet PDF文件第3页浏览型号REF3225AMDBVREP的Datasheet PDF文件第4页浏览型号REF3225AMDBVREP的Datasheet PDF文件第5页浏览型号REF3225AMDBVREP的Datasheet PDF文件第6页浏览型号REF3225AMDBVREP的Datasheet PDF文件第7页 
REF3212-EP, REF3220-EP, REF3225-EP  
REF3230-EP, REF3233-EP, REF3240-EP  
www.ti.com  
SBVS078B OCTOBER 2006REVISED AUGUST 2011  
4 ppm/°C, 100 μA SOT23-6 SERIES VOLTAGE REFERENCES  
Check for Samples: REF3212-EP, REF3220-EP, REF3225-EP, REF3230-EP, REF3233-EP, REF3240-EP  
1
FEATURES  
APPLICATIONS  
Excellent Specified Drift Performance:  
Portable Equipment  
Data Acquisition Systems  
Medical Equipment  
Test Equipment  
7ppm/°C (Max) at 0°C to 125°C  
20ppm/°C (Max) at 40°C to 125°C  
40ppm/°C (Max) at 55°C to 125°C  
Microsize Package: SOT23-6  
High Output Current: ±10 mA  
High Accuracy: 0.01%  
REF3212  
6
5
4
OUT_F  
OUT_S  
IN  
1
2
3
GND_F  
GND_S  
ENABLE  
REF3220  
REF3225  
REF3230  
Low Quiescent Current: 100 μA  
Low Dropout: 5 mV  
REF3233  
REF3240  
SUPPORTS DEFENSE, AEROSPACE,  
AND MEDICAL APPLICATIONS  
Controlled Baseline  
One Assembly/Test Site  
One Fabrication Site  
Available in Military (55°C/125°C)  
Temperature Range(1)  
Extended Product Life Cycle  
Extended Product-Change Notification  
Product Traceability  
(1) Additional temperature ranges are available - contact factory  
TEMPERATURE DRIFT  
DROPOUT VOLTAGE  
vs LOAD CURRENT  
_
_
(0 C to +125 C)  
160  
140  
120  
100  
80  
_
+125 C  
_
+25 C  
_
40 C  
60  
40  
20  
0
5
15  
10  
0
5
10  
15  
0.5  
1
1.5  
2
2.5  
3
3.5  
4 4.5 5 5.5 6 6.5 7  
_
Load Current (mA)  
Drift (ppm/ C)  
1
Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of Texas  
Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.  
PRODUCTION DATA information is current as of publication date.  
Products conform to specifications per the terms of the Texas  
Instruments standard warranty. Production processing does not  
necessarily include testing of all parameters.  
Copyright © 20062011, Texas Instruments Incorporated  

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