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RD6.8ESAB3 PDF预览

RD6.8ESAB3

更新时间: 2024-02-06 01:03:31
品牌 Logo 应用领域
日电电子 - NEC 二极管
页数 文件大小 规格书
7页 105K
描述
Zener Diode, 6.835V V(Z), 1.98%, 0.4W, Silicon, Unidirectional, DO-34, GLASS PACKAGE-2

RD6.8ESAB3 技术参数

是否Rohs认证: 符合生命周期:Obsolete
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.50风险等级:5.84
Base Number Matches:1

RD6.8ESAB3 数据手册

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DATA SHEET  
ZENER DIODES  
RD2.0ES to RD39ES  
400 mW DHD ZENER DIODE  
(DO-34)  
DESCRIPTION  
PACKAGE DIMENSIONS  
NEC Type RD2.0ES to RD39ES Series are planar type diodes into DO-34  
Package (Body length 2.4 mm MAX.) with DHD (Double Heatsink Diode)  
construction having allowable power dissipation of 400 mW.  
(in millimeters)  
φ
0.4  
FEATURES  
• DO-34 Glass sealed package  
This diode can be inserted into a PC board with a shorter pitch (5 mm)  
5 mm  
Cathode  
indication  
φ
2.0 MAX.  
• Planar process  
• DHD (Double Heatsink Diode) construction  
• VZ Applied E24 standard  
ORDERING INFORMATION  
DO-34 (JEDEC)  
Marking color: Black  
RD2.0ES to RD39ES with suffix "AB1", "AB2", or "AB3" should be applied  
for orders for suffix "AB".  
APPLICATIONS  
Circuits for Constant Voltage, Constant Current, Waveform clipper, Surge absorber, etc.  
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)  
Forward Current  
IF  
150 mA  
400 mW  
Power Dissipation  
P
to see Fig. 6  
to see Fig. 10  
Surge Reverse Power  
Junction Temperature  
Storage Temperature  
PRSM  
Tj  
100 W (t = 10 µs)  
175°C  
–65 to +175°C  
Tstg  
The information in this document is subject to change without notice. Before using this document, please  
confirm that this is the latest version.  
Not all products and/or types are available in every country. Please check with an NEC Electronics  
sales representative for availability and additional information.  
Document No. D13935EJ7V0DS00 (7th edition)  
Date Published April 2003 N CP(K)  
Printed in Japan  
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