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RD6.8EB7 PDF预览

RD6.8EB7

更新时间: 2024-11-23 03:37:31
品牌 Logo 应用领域
日电电子 - NEC 稳压二极管
页数 文件大小 规格书
12页 96K
描述
500 mW DHD ZENER DIODE DO-35

RD6.8EB7 数据手册

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DATA SHEET  
ZENER DIODES  
RD2.0E to RD200E  
500 mW DHD ZENER DIODE  
(DO-35)  
DESCRIPTION  
PACKAGE DIMENSIONS  
NEC Type RD2.0E to RD200E Series are planar type zener diode in the  
popular DO-35 package with DHD (Double Heatsink Diode) construction  
having allowable power dissipation of 500 mW. To meet various application  
at customers, Vz (zener voltage) is classified into the tight tolerance under  
the specific suffix (B, B1 to B7).  
(in millimeters)  
φ
0.5  
FEATURES  
Cathode  
indication  
DHD (Double Heatsink Diode) Construction  
Vz: Applied E24 standard (RD130E to RD200E: 10 volts step)  
DO-35 Glass sealed package  
φ
2.0 MAX.  
ORDER INFORMATION  
RD2.0 E to RD39E with suffix “B1”, “B2”, “B3”, “B4”, “B5”, “B6” or “B7”  
should be applied for orders for suffix “B”.  
APPLICATIONS  
Circuits for Constant Voltage, Constant Current, Waveform Clipper, Surge absorber, etc.  
ABSOLUTE MAXIMUM RATINGS (TA = 25 ˚C)  
Forward Current  
IF  
200 mA  
500 mW  
Power Dissipation  
P
Surge Reverse Power  
Junction Temperature  
Storage Temperature  
PRSM  
Tj  
100 W (t = 10 µs)  
175 ˚C  
to see Fig. 17  
Tstg  
–65 to +175 ˚C  
Document No. D10213EJ5V0DS00 (5th edition)  
Date Published December 1998 N CP(K)  
Printed in Japan  
1981  
©

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