Datasheet > RD38F5070MLT0B

RD38F5070MLT0B

更新时间： 2024-11-10 04:08:35

品牌	Logo	应用领域
恒忆 - NUMONYX		闪存无线
页数	文件大小	规格书
102页	1372K
描述
Numonyx Wireless Flash Memory (W18)

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中文翻译

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数据手册

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RD38F5070MLT0B 数据手册

Numonyx™ Wireless Flash Memory (W18)

Datasheet

Product Features

High Performance Read-While-Write/Erase

Architecture

— Burst frequency at 66 MHz

(zero wait states)

— 60 ns Initial access read speed

— 11 ns Burst mode read speed

— 20 ns Page mode read speed

— Multiple 4-Mbit partitions

— Dual Operation: RWW or RWE

— Parameter block size = 4-Kword

— Main block size = 32-Kword

— Top or bottom parameter devices

— 16-bit wide data bus

— 4-, 8-, 16-, and Continuous-Word Burst

mode reads

Software

— Burst and Page mode reads in all Blocks,

across all partition boundaries

— Burst Suspend feature

— Enhanced Factory Programming at 3.1 µs/

word

— 5 µs (typ.) Program and Erase Suspend

latency time

— Flash Data Integrator (FDI) and Common

Flash Interface (CFI) Compatible

— Programmable WAIT signal polarity

Packaging and Power

Security

— 128-Bit OTP Protection Register:

64 unique pre-programmed bits +

64 user-programmable bits

— Absolute Write Protection with V_PPat ground

— Individual and Instantaneous Block Locking/

Unlocking with Lock-Down Capability

— 90 nm: 32- and 64-Mbit in VF BGA

— 130 nm: 32-, 64-, and 128-Mbit in VF BGA

— 130 nm: 128-Mbit in QUAD+ package

— 56 Active Ball Matrix, 0.75 mm Ball-Pitch

— V_CC= 1.70 V to 1.95 V

— V_CCQ(90 nm) = 1.7 V to 1.95 V

Quality and Reliability

— V_CCQ(130 nm) = 1.7 V to 2.24 V or 1.35 V

to 1.80 V

— V_CCQ(130 nm) = 1.35 V to 2.24 V

— Standby current (130 nm): 8 µA (typ.)

— Read current: 8 mA (4-word burst, typ.)

— Temperature Range: –40 °C to +85 °C

— 100K Erase Cycles per Block

— 90 nm ETOX™ IX Process

— 130 nm ETOX™ VIII Process

Order Number: 290701-18

November 2007

12 3 4 5 6 7...102

中文翻译

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