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RCD10F PDF预览

RCD10F

更新时间: 2024-04-09 18:58:49
品牌 Logo 应用领域
银河微电 - BL Galaxy Electrical /
页数 文件大小 规格书
4页 240K
描述
1A,800V, Surface Mount Standard Recovery Rectifiers

RCD10F 数据手册

 浏览型号RCD10F的Datasheet PDF文件第2页浏览型号RCD10F的Datasheet PDF文件第3页浏览型号RCD10F的Datasheet PDF文件第4页 
Product Specification  
Auxiliary Switch Diode for RCD  
RCD10F  
Description  
RCD10F is designed tostore a large amount of charge during forward conduction. When change to the  
reverse direction, it will set up an electric currentin a short time. After the current, the store charge  
disappeared and the electric currentimmediately stopped. This characteristicsuitable for various types of  
power supply RCD absorption circuit particularly, it can recover leakage inductance energy to improve the  
efficiency of light load, and can also avoid the loss, due to overlap of the voltage and the current.  
Features  
Reverse conduction capability  
Integrated series resistance  
Switching loss is small  
Smoothly soft reverse recovery time  
RoHS compliant with Halogen-free  
Mechanical Data  
Case: SMAF molded plastic  
Molding compound, UL flammability classification rating 94V-0  
Terminals: Solder Plated, solderable perMIL-STD-750, Method 2026  
Polarity: Color band denotes cathode end  
Maximum Ratings (@TA = 25°C unless otherwise specified)  
Parameter  
Symbol  
RCD10F  
Unit  
Peak repetitive reverse voltage  
RMS reverse voltage  
VRRM  
VRMS  
VDC  
800  
560  
800  
1.0  
V
V
V
A
DC blocking voltage  
Maximum average forward output current  
IF(AV)  
Peak forward surge current,  
@TJ= 25°C  
IFSM  
10  
A
8.3ms single half-sine-wave  
Thermal Characteristics  
Parameter  
Symbol  
RCD10F  
Unit  
78  
20  
RΘJA  
RΘJC  
RΘJL  
TJ  
Typical Thermal Resistance *1  
°C /W  
18  
Operating junction temperature range  
Storage temperature range  
-55 ~ +150  
-55 ~ +150  
°C  
°C  
TSTG  
Note *1: Device mounted on p.c.b. with 10 mm x 20 mm x 0.1mm copper pad area  
SPP0003A www.gmesemi.com  
1

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