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RC80 PDF预览

RC80

更新时间: 2024-11-25 03:37:43
品牌 Logo 应用领域
EDI 二极管快速恢复二极管
页数 文件大小 规格书
2页 40K
描述
FAST RECOVERY 200 NANOSECOND SILICON RECTIFIER

RC80 技术参数

生命周期:Contact Manufacturer包装说明:O-PALF-W2
Reach Compliance Code:unknownECCN代码:EAR99
HTS代码:8541.10.00.80风险等级:5.74
Is Samacsys:N外壳连接:ISOLATED
配置:SINGLE二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):1.4 V
JESD-30 代码:O-PALF-W2最大非重复峰值正向电流:50 A
元件数量:1端子数量:2
最高工作温度:150 °C最大输出电流:1 A
封装主体材料:PLASTIC/EPOXY封装形状:ROUND
封装形式:LONG FORM认证状态:Not Qualified
最大重复峰值反向电压:800 V最大反向恢复时间:0.2 µs
子类别:Rectifier Diodes表面贴装:NO
端子形式:WIRE端子位置:AXIAL
Base Number Matches:1

RC80 数据手册

 浏览型号RC80的Datasheet PDF文件第2页 
RC  
FAST RECOVERY 200 NANOSECOND  
SILICON RECTIFIER  
SMALL SIZE  
LOW LEAKAGE  
HIGH TEMPERATURE STABILITY  
HIGH SURGE CAPABILITY  
Maximum Reverse  
RECOVERY TIME  
IN NANOSECONDS  
EDI  
PRV  
Volts  
Type  
(Fig.4)  
200  
RC05  
RC10  
RC20  
RC40  
RC60  
RC80  
RC100  
50  
100  
200  
400  
600  
800  
1000  
200  
200  
200  
200  
200  
200  
o
ELECTRICAL CHARACTERISTICS(at  
T =25 C Unless Otherwise Specified)  
A
o
Average Rectif ied ForwardCurrent @ 50 C, IO  
Max. Peak Surge Current , IFSM (8.3 ms)  
1 Amp  
50 Amp  
1.4Volts  
Max. Forward Voltage Drop @ 1 Amp, V  
F
o
1
A
Max. DC Reverse Current @ P RV and 25 C, I  
R
o
A
50  
Max. DC Reverse Current @ PRV and100 C, I  
R
200 nanosec Max  
125nanosec Typical  
Trr (Reverse Recovery time), Fig. 4  
o
o
-55 C to +150 C  
Ambient Operating Temperature Range, T  
A
o
o
-55 C to +175 C  
Storage Temperature Range, T  
STG  
NOTE:  
Maxinum lead and terminal temperature for soldering, 3/8 inch from case,5 seconds at 250 C  

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