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RC48F4400P0VB0E PDF预览

RC48F4400P0VB0E

更新时间: 2024-11-04 21:20:11
品牌 Logo 应用领域
恒忆 - NUMONYX 时钟内存集成电路闪存
页数 文件大小 规格书
91页 983K
描述
Flash, 32MX16, 100ns, PBGA64, BGA-64

RC48F4400P0VB0E 技术参数

是否Rohs认证: 不符合生命周期:Transferred
零件包装代码:BGA包装说明:TBGA, BGA64,8X8,40
针数:64Reach Compliance Code:unknown
ECCN代码:3A991.B.1.AHTS代码:8542.32.00.51
风险等级:5.6Is Samacsys:N
最长访问时间:100 ns其他特性:ASYNCHRONOUS READ MODE
备用内存宽度:16启动块:BOTTOM/TOP
命令用户界面:YES通用闪存接口:YES
数据轮询:NOJESD-30 代码:R-PBGA-B64
长度:13 mm内存密度:536870912 bit
内存集成电路类型:FLASH内存宽度:16
功能数量:1部门数/规模:8, 510
端子数量:64字数:33554432 words
字数代码:32000000工作模式:SYNCHRONOUS
最高工作温度:85 °C最低工作温度:-40 °C
组织:32MX16封装主体材料:PLASTIC/EPOXY
封装代码:TBGA封装等效代码:BGA64,8X8,40
封装形状:RECTANGULAR封装形式:GRID ARRAY, THIN PROFILE
并行/串行:PARALLEL电源:1.8,3/3.3 V
编程电压:1.8 V认证状态:Not Qualified
座面最大高度:1.2 mm部门规模:16K,64K
最大待机电流:0.00042 A子类别:Flash Memories
最大压摆率:0.031 mA最大供电电压 (Vsup):2 V
最小供电电压 (Vsup):1.7 V表面贴装:YES
技术:CMOS温度等级:INDUSTRIAL
端子形式:BALL端子节距:1 mm
端子位置:BOTTOM切换位:NO
类型:NOR TYPE宽度:10 mm
Base Number Matches:1

RC48F4400P0VB0E 数据手册

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NumonyxTM StrataFlash® Embedded Memory  
(P30-65nm)  
256-Mbit, 512-Mbit (256M/256M)  
Datasheet  
Product Features  
„ High performance  
„ Security  
— 100 ns initial access for Easy BGA  
— 110 ns initial access for TSOP  
— 25 ns 16-word asynchronous-page read mode  
— 52 MHz with zero WAIT states, 17ns clock-to-  
data output synchronous-burst read mode  
— 4-, 8-, 16-, and continuous-word options for  
burst mode  
— One-Time Programmable Register:  
• 64 unique factory device identifier bits  
• 2112 user-programmable OTP bits  
— Absolute write protection: V = V  
PP  
SS  
— Power-transition erase/program lockout  
— Individual zero-latency block locking  
— Individual block lock-down  
— Buffered Enhanced Factory Programming  
(BEFP) at 2.0 MByte/s (Typ) using 512-word  
buffer  
— Password Access feature  
„ Software  
— 20 µs (Typ) program suspend  
— 20 µs (Typ) erase suspend  
— Numonyx™ Flash Data Integrator optimized  
— Basic Command Set and Extended Function  
Interface (EFI) Command Set compatible  
— Common Flash Interface capable  
— 1.8 V buffered programming at 1.5MByte/s  
(Typ) using 512-word buffer  
„ Architecture  
— Multi-Level Cell Technology: Highest Density  
at Lowest Cost  
— Asymmetrically-blocked architecture  
— Four 32-KByte parameter blocks: top or  
bottom configuration  
„ Density and Packaging  
— 56-Lead TSOP package (256-Mbit only)  
— 64-Ball Easy BGA package (256, 512-Mbit)  
— Numonyx™ QUAD+ SCSP (256, 512-Mbit)  
— 16-bit wide data bus  
— 128-KByte main blocks  
— Blank Check to verify an erased block  
„ Voltage and Power  
„ Quality and Reliability  
— V (core) voltage: 1.7 V – 2.0 V  
CC  
CCQ  
— Operating temperature: –40 °C to +85 °C  
— Minimum 100,000 erase cycles per block  
— ETOX™ X process technology  
— V  
(I/O) voltage: 1.7 V – 3.6 V  
— Standby current: 65 µA (Typ) for 256-Mbit;  
— 52 MHz continuos synchronous read current:  
21mA (Typ)/24mA(Max)  
Datasheet  
1
Apr 2009  
Order Number: 320002-08  

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