是否Rohs认证: | 不符合 | 生命周期: | Transferred |
零件包装代码: | BGA | 包装说明: | TBGA, BGA64,8X8,40 |
针数: | 64 | Reach Compliance Code: | unknown |
ECCN代码: | 3A991.B.1.A | HTS代码: | 8542.32.00.51 |
风险等级: | 5.6 | Is Samacsys: | N |
最长访问时间: | 100 ns | 其他特性: | ASYNCHRONOUS READ MODE |
备用内存宽度: | 16 | 启动块: | BOTTOM/TOP |
命令用户界面: | YES | 通用闪存接口: | YES |
数据轮询: | NO | JESD-30 代码: | R-PBGA-B64 |
长度: | 13 mm | 内存密度: | 536870912 bit |
内存集成电路类型: | FLASH | 内存宽度: | 16 |
功能数量: | 1 | 部门数/规模: | 8, 510 |
端子数量: | 64 | 字数: | 33554432 words |
字数代码: | 32000000 | 工作模式: | SYNCHRONOUS |
最高工作温度: | 85 °C | 最低工作温度: | -40 °C |
组织: | 32MX16 | 封装主体材料: | PLASTIC/EPOXY |
封装代码: | TBGA | 封装等效代码: | BGA64,8X8,40 |
封装形状: | RECTANGULAR | 封装形式: | GRID ARRAY, THIN PROFILE |
并行/串行: | PARALLEL | 电源: | 1.8,3/3.3 V |
编程电压: | 1.8 V | 认证状态: | Not Qualified |
座面最大高度: | 1.2 mm | 部门规模: | 16K,64K |
最大待机电流: | 0.00042 A | 子类别: | Flash Memories |
最大压摆率: | 0.031 mA | 最大供电电压 (Vsup): | 2 V |
最小供电电压 (Vsup): | 1.7 V | 表面贴装: | YES |
技术: | CMOS | 温度等级: | INDUSTRIAL |
端子形式: | BALL | 端子节距: | 1 mm |
端子位置: | BOTTOM | 切换位: | NO |
类型: | NOR TYPE | 宽度: | 10 mm |
Base Number Matches: | 1 |
型号 | 品牌 | 获取价格 | 描述 | 数据表 |
RC48F4400P0VB0EA | NUMONYX |
获取价格 |
Flash, 32MX16, PBGA64, BGA-64 | |
RC48F4400P0VB0EA | MICRON |
获取价格 |
1.7V to 2.0V VCC (core) voltage, 1.7V to 3.6V VCCQ (I/O) voltage | |
RC48F4400P0VB0EJ | MICRON |
获取价格 |
256Mb and 512Mb (256Mb/256Mb), P30-65nm | |
RC48F4400P0VT00 | INTEL |
获取价格 |
Intel StrataFlash Embedded Memory | |
RC48F4400P0VT00A | INTEL |
获取价格 |
暂无描述 | |
RC48F4400P0VT00A | MICRON |
获取价格 |
64Mb, 128Mb, 256Mb, 512Mb, Multilevel Cell, Parallel NOR Flash Memory | |
RC48F4400P0X1B0 | NUMONYX |
获取价格 |
StrataFlash㈢ Cellular Memory | |
RC48F4400P0X1U0 | NUMONYX |
获取价格 |
StrataFlash㈢ Cellular Memory | |
RC48F4400P0X1V0 | NUMONYX |
获取价格 |
StrataFlash㈢ Cellular Memory | |
RC48F4400P0XBB0 | NUMONYX |
获取价格 |
StrataFlash㈢ Cellular Memory |