Datasheet > RC48F4400P0VB00A

RC48F4400P0VB00A

更新时间： 2024-11-05 15:18:23

品牌	Logo	应用领域
镁光 - MICRON		/
页数	文件大小	规格书
97页	1227K
描述
64Mb, 128Mb, 256Mb, 512Mb, Multilevel Cell, Parallel NOR Flash Memory

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中文翻译

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数据手册

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RC48F4400P0VB00A 数据手册

Numonyx™ StrataFlash Embedded Memory

(P30)

Datasheet

Product Features

High performance

Security

— One-Time Programmable Registers:

— 85 ns initial access

• 64 unique factory device identifier bits

• 2112 user-programmable OTP bits

— Selectable OTP Space in Main Array:

• Four pre-defined 128-KByte blocks (top or bottom

configuration)

— 52 MHz with zero wait states, 17ns clock-to-data output

synchronous-burst read mode

— 25 ns asynchronous-page read mode

— 4-, 8-, 16-, and continuous-word burst mode

— Buffered Enhanced Factory Programming (BEFP) at 5 μs/

byte (Typ)

• Up to Full Array OTP Lockout

— Absolute write protection: V = V

— 1.8 V buffered programming at 7 μs/byte (Typ)

— Power-transition erase/program lockout

— Individual zero-latency block locking

— Individual block lock-down

Architecture

— Multi-Level Cell Technology: Highest Density at Lowest

Cost

Software

— Asymmetrically-blocked architecture

— Four 32-KByte parameter blocks: top or bottom

configuration

— 20 μs (Typ) program suspend

— 20 μs (Typ) erase suspend

— Numonyx™ Flash Data Integrator optimized

— Basic Command Set and Extended Command Set

compatible

— 128-KByte main blocks

Voltage and Power

— V (core) voltage: 1.7 V – 2.0 V

— Common Flash Interface capable

— V

(I/O) voltage: 1.7 V – 3.6 V

CCQ

Density and Packaging

— Standby current: 20μA (Typ) for 64-Mbit

— 4-Word synchronous read current:

13 mA (Typ) at 40 MHz

— 56- Lead TSOP package (64, 128, 256,

512- Mbit)

— 64- Ball Numonyx™ Easy BGA package (64,

128, 256, 512- Mbit)

— Numonyx™ QUAD+ SCSP (64, 128, 256,

512- Mbit)

Quality and Reliability

— Operating temperature: –40 °C to +85 °C

— Minimum 100,000 erase cycles per block

— ETOX™ VIII process technology

— 16-bit wide data bus

306666-12

August 2008

12 3 4 5 6 7...97

中文翻译

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与RC48F4400P0VB00A相关器件

型号	品牌	获取价格	描述	数据表
RC48F4400P0VB0E	MICRON	获取价格	Micron Parallel NOR Flash Embedded Memory (P30-65nm)
RC48F4400P0VB0E	NUMONYX	获取价格	Flash, 32MX16, 100ns, PBGA64, BGA-64
RC48F4400P0VB0EA	NUMONYX	获取价格	Flash, 32MX16, PBGA64, BGA-64
RC48F4400P0VB0EA	MICRON	获取价格	1.7V to 2.0V VCC (core) voltage, 1.7V to 3.6V VCCQ (I/O) voltage
RC48F4400P0VB0EJ	MICRON	获取价格	256Mb and 512Mb (256Mb/256Mb), P30-65nm
RC48F4400P0VT00	INTEL	获取价格	Intel StrataFlash Embedded Memory
RC48F4400P0VT00A	INTEL	获取价格	暂无描述
RC48F4400P0VT00A	MICRON	获取价格	64Mb, 128Mb, 256Mb, 512Mb, Multilevel Cell, Parallel NOR Flash Memory
RC48F4400P0X1B0	NUMONYX	获取价格	StrataFlash㈢ Cellular Memory
RC48F4400P0X1U0	NUMONYX	获取价格	StrataFlash㈢ Cellular Memory