Datasheet > RC48F4400P0U1V0

RC48F4400P0U1V0

更新时间： 2024-11-04 03:25:15

品牌	Logo	应用领域
恒忆 - NUMONYX		蜂窝
页数	文件大小	规格书
139页	2135K
描述
StrataFlash㈢ Cellular Memory

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中文翻译

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数据手册

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RC48F4400P0U1V0 数据手册

Numonyx™ StrataFlash Cellular Memory

(M18)

Datasheet

Product Features

High-Performance Read, Program and Erase

Power

— Core voltage: 1.7 V - 2.0 V

— 96 ns initial read access

— 108 MHz with zero wait-state synchronous

burst reads: 7 ns clock-to-data output

— 133 MHz with zero wait-state synchronous

burst reads: 5.5 ns clock-to-data output

— 8-, 16-, and continuous-word

synchronous-burst Reads

— Programmable WAIT configuration

— Customer-configurable output driver

impedance

— Buffered Programming:

— I/O voltage: 1.7 V - 2.0 V

— Standby current: 60 µA (typ) for 512-Mbit,

65 nm

— Deep Power-Down mode: 2 µA (typ)

— Automatic Power Savings mode

— 16-word synchronous-burst read current:

23 mA (typ) @ 108 MHz; 24 mA (typ) @

133 MHz

Software

— Numonyx™ Flash Data Integrator

(Numonyx™ FDI) optimized

— Basic Command Set and Extended

Command Set compatible

2.0 µs/Word (typ), 512-Mbit 65 nm;

Block Erase: 0.9 s per block (typ)

— 20 µs (typ) program/erase suspend

Architecture

— Common Flash Interface

— 16-bit wide data bus

— Multi-Level Cell Technology

Security

— OTP Registers:

— Symmetrically-Blocked Array Architecture

— 256-Kbyte Erase Blocks

64 unique pre-programmed bits

2112 user-programmable bits

— Absolute write protection with V_PP= GND

— Power-transition erase/program lockout

— Individual zero-latency block locking

— Individual block lock-down

— 1-Gbit device: Eight 128-Mbit partitions

— 512-Mbit device: Eight 64-Mbit partitions

— 256-Mbit device: Eight 32-Mbit partitions.

— 128-Mbit device: Eight 16-Mbit partitions.

— Read-While-Program and Read-While-Erase

— Status Register for partition/device status

— Blank Check feature

Density and Packaging

— Density: 128-, 256-, and 512-Mbit, and 1-

Gbit

— Address-data multiplexed and non-

multiplexed interfaces

— x16D (105-ball) Flash SCSP

— x16C (107-ball) Flash SCSP

— 0.8 mm pitch lead-free solder-ball

Quality and Reliability

— Expanded temperature: –30 °C to +85 °C

— Minimum 100,000 erase cycles per block

— ETOX™ X Process Technology (65 nm)

— ETOX™ IX Process Technology (90 nm)

Order Number: 309823-11

April 2008

12 3 4 5 6 7...139

中文翻译

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与RC48F4400P0U1V0相关器件

型号	品牌	获取价格	描述	数据表
RC48F4400P0UBB0	NUMONYX	获取价格	StrataFlash㈢ Cellular Memory
RC48F4400P0UBU0	NUMONYX	获取价格	StrataFlash㈢ Cellular Memory
RC48F4400P0UBV0	NUMONYX	获取价格	StrataFlash㈢ Cellular Memory
RC48F4400P0UWB0	NUMONYX	获取价格	StrataFlash㈢ Cellular Memory
RC48F4400P0UWU0	NUMONYX	获取价格	StrataFlash㈢ Cellular Memory
RC48F4400P0UWV0	NUMONYX	获取价格	StrataFlash㈢ Cellular Memory
RC48F4400P0VB00	NUMONYX	获取价格	Numonyx StrataFlash Embedded Memory
RC48F4400P0VB00	INTEL	获取价格	Intel StrataFlash Embedded Memory
RC48F4400P0VB00A	MICRON	获取价格	64Mb, 128Mb, 256Mb, 512Mb, Multilevel Cell, Parallel NOR Flash Memory
RC48F4400P0VB0E	MICRON	获取价格	Micron Parallel NOR Flash Embedded Memory (P30-65nm)

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