Datasheet > RC48F4400P0TB0EJ

RC48F4400P0TB0EJ

更新时间： 2024-11-05 15:17:43

品牌	Logo	应用领域
镁光 - MICRON		/
页数	文件大小	规格书
92页	1219K
描述
2.3V to 3.6V VCC (core) voltage, 2.3V to 3.6V VCCQ (I/O) voltage

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数据手册
替代型号

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RC48F4400P0TB0EJ 数据手册

256Mb and 512Mb (256Mb/256Mb),

P33-65nm

Features

Micron Parallel NOR Flash Embedded

Memory (P33-65nm)

RC28F256P33TFE, RC28F256P33BFE, RC28F256P33BFF,

PC28F256P33TFE, PC28F256P33BFE, PC28F256P33BFF,

PC28F256P33BFR, RC48F4400P0TB0EJ, PC48F4400P0TB0EE,

PC48F4400P0TB0EH, JS28F256P33TFE, JS28F256P33BFE

• Security

Features

• High performance

– One-time programmable register: 64 OTP bits,

programmed with unique information from Mi-

cron; 2112 OTP bits available for customer pro-

gramming

– 95ns initial access for Easy BGA

– 105ns initial access for TSOP

– 25ns 16-word asychronous page read mode

– 52 MHz (Easy BGA) with zero WAIT states and

17ns clock-to-data output synchronous burst

read mode

– Absolute write protection: V_PP= V_SS

– Power-transition erase/program lockout

– Individual zero-latency block locking

– Individual block lock-down

– Password access

• Software

– 4-, 8-, 16-, and continuous word options for burst

mode

– Buffered enhanced factory programming (BEFP)

at 2 MB/s (TYP) using a 512-word buffer

– 3.0V buffered programming at 1.14 MB/s (TYP)

using a 512-word buffer

– 25µs (TYP) program suspend

– 25µs (TYP) erase suspend

– Flash Data Integrator optimized

– Basic command set and extended function Inter-

face (EFI) command set compatible

– Common flash interface

• Architecture

– MLC: highest density at lowest cost

– Asymmetrically blocked architecture

– Four 32KB parameter blocks: top or bottom con-

figuration

– 128KB main blocks

– Blank check to verify an erased block

• Voltage and power

• Density and Packaging

– 56-lead TSOP package (256Mb only)

– 64-ball Easy BGA package (256Mb, 512Mb)

– QUAD+ and SCSP packages (256Mb, 512Mb)

– 16-bit wide data bus

• Quality and reliabilty

– V_CC(core) voltage: 2.3V to 3.6V

– V_CCQ(I/O) voltage: 2.3V to 3.6V

– Standy current: 65µA (TYP) for 256Mb

– 52 MHz continuous synchronous read current:

21mA (TYP), 24mA (MAX)

– JESD47 compliant

– Operating temperature: –40°C to +85°C

– Minimum 100,000 ERASE cycles per block

– 65nm process technology

PDF: 09005aef845667ad

p33_65nm_MLC_256Mb-512mb.pdf - Rev. D 2/18 EN

Micron Technology, Inc. reserves the right to change products or specifications without notice.

Products and specifications discussed herein are subject to change by Micron without notice.

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RC48F4400P0TB0EJ 替代型号

型号	品牌	替代类型	描述	数据表
PC48F4400P0TB0EE	MICRON	完全替代	2.3V to 3.6V VCC (core) voltage, 2.3V to 3.6V VCCQ (I/O) voltage

与RC48F4400P0TB0EJ相关器件

型号	品牌	获取价格	描述	数据表
RC48F4400P0TBB0	NUMONYX	获取价格	StrataFlash㈢ Cellular Memory
RC48F4400P0TBU0	NUMONYX	获取价格	StrataFlash㈢ Cellular Memory
RC48F4400P0TBV0	NUMONYX	获取价格	StrataFlash㈢ Cellular Memory
RC48F4400P0TWB0	NUMONYX	获取价格	StrataFlash㈢ Cellular Memory
RC48F4400P0TWU0	NUMONYX	获取价格	StrataFlash㈢ Cellular Memory
RC48F4400P0TWV0	NUMONYX	获取价格	StrataFlash® Cellular Memory
RC48F4400P0U1B0	NUMONYX	获取价格	StrataFlash㈢ Cellular Memory
RC48F4400P0U1U0	NUMONYX	获取价格	StrataFlash㈢ Cellular Memory
RC48F4400P0U1V0	NUMONYX	获取价格	StrataFlash㈢ Cellular Memory
RC48F4400P0UBB0	NUMONYX	获取价格	StrataFlash㈢ Cellular Memory

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