Datasheet > RC30S04

RC30S04

更新时间： 2024-02-01 18:24:18

品牌	Logo	应用领域
SSE		电池
页数	文件大小	规格书
1页	17K
描述
SILICON SILASTIC CELL RECTIFIER

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中文翻译

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技术参数
数据手册

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RC30S04 技术参数

生命周期：	Contact Manufacturer	Reach Compliance Code：	unknown
ECCN代码：	EAR99	风险等级：	5.76
Base Number Matches：	1

RC30S04 数据手册

SHANGHAI SUNRISE ELECTRONICS CO., LTD.

RC30S01 THRU RC30S10

SILICON SILASTIC

CELL RECTIFIER

TECHNICAL

SPECIFICATION

VOLTAGE: 100 TO 1000V CURRENT: 30A

FEATURES

• Low cost

• High surge capability

• Solderable electrode surfaces

• Ideal for hybrids

MECHANICAL DATA

• Polarity: Bottom or upper electrode denotes

cathode according to the notice in

package

Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

(Single-phase, half-wave, resistive or inductive load rating at 25^oC, unless otherwise stated, for capacitive load, derate

current by 20%)

RC30S RC30S RC30S RC30S RC30S RC30S

RATINGS

SYMBOL

UNITS

100

V_RRM

V_RMS

V_DC

Maximum Repetitive Peak Reverse Voltage

Maximum RMS Voltage

200

140

200

400

280

400

600

420

600

800

560

800

1000

700

Maximum DC Blocking Voltage

100

1000

Maximum Average Forward Rectified Current

I_F(AV)

(T_a=55^oC)

(Note 2)

Peak Forward Surge Current (8.3ms single

half sine-wave superimposed on rated load)

Maximum Instantaneous Forward Voltage

(at rated forward current)

I_FSM

V_F

400

0.95

T_a=25^oC

Maximum DC Reverse Current

µA

I_R

T_a=150^oC

1000

(at rated DC blocking voltage)

300

C_J

Typical Junction Capacitance

Typical Thermal Resistance

(Note 1)

(Note 3)

^oC/W

^oC

R_θ(ja)

-50 to +150

_STG,T_J

Storage and Operation Junction Temperature

Note:

1. Measured at 1 MHz and applied voltage of 4.0V_dc

2. When mounted to heat sink from body.

3. Thermal resistance from junction to ambient.

http://www.sse-diode.com

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