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RC28F256J3F95A PDF预览

RC28F256J3F95A

更新时间: 2024-03-03 10:07:15
品牌 Logo 应用领域
镁光 - MICRON /
页数 文件大小 规格书
66页 711K
描述
256Mb, 65nm Embedded Parallel NOR Flash

RC28F256J3F95A 数据手册

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Numonyx™ StrataFlash® Embedded Memory  
(J3-65nm)  
256-Mbit  
Datasheet  
Product Features  
„ Architecture  
„ Security  
— Multi-Level Cell Technology: Highest  
Density at Lowest Cost  
— Enhanced security options for code  
protection  
— 256 symmetrically-sized blocks of 128  
Kbytes  
„ Performance  
— Absolute protection with VPEN = GND  
— Individual block locking  
— Block erase/program lockout during power  
transition  
— 95 ns initial access time for Easy BGA  
— 105 ns initial accsss time for TSOP  
— Password Access feature  
— 25 ns 16-word Asynchronous page-mode  
reads  
— 512-Word Buffer Programming at  
1.46MByte/s (Typ)  
— One-Time Programmable Register:  
64 OTP bits, programmed with unique  
information by Numonyx  
64 OTP bits, available for customer  
programming  
„ Software  
— 20 µs (Typ) program suspend  
— 20 µs (Typ) erase suspend  
— Numonyx™ Flash Data Integrator (FDI)  
— Common Flash Interface (CFI) Compatible  
„ Packaging  
„ Voltage and Power  
— VCC (Core) = 2.7 V to 3.6 V  
— VCCQ (I/O) = 2.7 V to 3.6 V  
— Standby Current: 65 µA (Typ)  
— Erase & Program Current: 35 mA (Typ)  
— Page Read: 12 mA (Typ)  
„ Quality and Reliability  
— 56-Lead TSOP  
— 64-Ball Easy BGA package  
— Operating temperature:  
-40 °C to +85 °C  
— 100K Minimum erase cycles per block  
— 65 nm NumonyxTM ETOX™ X Process  
technology  
319942-02  
December 2008  

RC28F256J3F95A 替代型号

型号 品牌 替代类型 描述 数据表
RC28F256J3D95A MICRON

完全替代

32Mb, 64Mb, 128Mb, 256Mb Monolithic Embedded Parallel NOR Flash Memory
PC28F256J3F95A MICRON

完全替代

256Mb, 65nm Embedded Parallel NOR Flash
RC28F256P33BFE MICRON

类似代替

2.3V to 3.6V VCC (core) voltage, 2.3V to 3.6V VCCQ (I/O) voltage

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