Datasheet > RC28F128P30B85

RC28F128P30B85

更新时间： 2024-01-06 00:21:17

品牌	Logo	应用领域
英特尔 - INTEL		闪存存储内存集成电路
页数	文件大小	规格书
102页	1616K
描述
Intel StrataFlash Embedded Memory

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RC28F128P30B85 数据手册

Intel StrataFlash Embedded Memory

(P30)

1-Gbit P30 Family

Datasheet

Product Features

■ High performance

■ Security

— One-Time Programmable Registers:

— 85/88 ns initial access

• 64 unique factory device identifier bits

• 64 user-programmable OTP bits

• Additional 2048 user-programmable OTP bits

— Selectable OTP Space in Main Array:

• 4x32KB parameter blocks + 3x128KB main

blocks (top or bottom configuration)

— Absolute write protection: V_PP= V_SS

— Power-transition erase/program lockout

— Individual zero-latency block locking

— Individual block lock-down

— 40 MHz with zero wait states, 20 ns clock-to-

data output synchronous-burst read mode

— 25 ns asynchronous-page read mode

— 4-, 8-, 16-, and continuous-word burst mode

— Buffered Enhanced Factory Programming

(BEFP) at 5 µs/byte (Typ)

— 1.8 V buffered programming at 7 µs/byte (Typ)

■ Architecture

— Multi-Level Cell Technology: Highest Density

at Lowest Cost

■ Software

— Asymmetrically-blocked architecture

— Four 32-KByte parameter blocks: top or

bottom configuration

— 20 µs (Typ) program suspend

— 20 µs (Typ) erase suspend

— Intel^®Flash Data Integrator optimized

— Basic Command Set and Extended Command

Set compatible

— 128-KByte main blocks

■ Voltage and Power

— V_CC(core) voltage: 1.7 V – 2.0 V

— V_CCQ(I/O) voltage: 1.7 V – 3.6 V

— Standby current: 55 µA (Typ) for 256-Mbit

— 4-Word synchronous read current:

13 mA (Typ) at 40 MHz

— Common Flash Interface capable

■ Density and Packaging

— 64/128/256-Mbit densities in 56-Lead TSOP

package

— 64/128/256/512-Mbit densities in 64-Ball

Intel® Easy BGA package

— 64/128/256/512-Mbit and 1-Gbit densities in

Intel® QUAD+ SCSP

■ Quality and Reliability

— Operating temperature: –40 °C to +85 °C

• 1-Gbit in SCSP is –30 °C to +85 °C

— Minimum 100,000 erase cycles per block

— ETOX™ VIII process technology (130 nm)

— 16-bit wide data bus

The Intel StrataFlash^®Embedded Memory (P30) product is the latest generation of Intel

StrataFlash^®memory devices. Offered in 64-Mbit up through 1-Gbit densities, the P30 device

brings reliable, two-bit-per-cell storage technology to the embedded flash market segment.

Benefits include more density in less space, high-speed interface, lowest cost-per-bit NOR

device, and support for code and data storage. Features include high-performance synchronous-

burst read mode, fast asynchronous access times, low power, flexible security options, and three

industry standard package choices.

The P30 product family is manufactured using Intel^®130 nm ETOX™ VIII process technology.

Order Number: 306666, Revision: 001

April 2005

12 3 4 5 6 7...102

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与RC28F128P30B85相关器件

型号	品牌	获取价格	描述	数据表
RC28F128P30B85A	NUMONYX	获取价格	Flash, 8MX16, 88ns, PBGA64, BGA-64
RC28F128P30B85A	MICRON	获取价格	64Mb, 128Mb, 256Mb, 512Mb, Multilevel Cell, Parallel NOR Flash Memory
RC28F128P30BF65A	MICRON	获取价格	64Mb, 128Mb, 65nm, Single Bit Per Cell, Parallel NOR Flash
RC28F128P30T85	NUMONYX	获取价格	Numonyx StrataFlash Embedded Memory
RC28F128P30T85	INTEL	获取价格	Intel StrataFlash Embedded Memory
RC28F128P30T85A	MICRON	获取价格	64Mb, 128Mb, 256Mb, 512Mb, Multilevel Cell, Parallel NOR Flash Memory
RC28F128P33B85A	NUMONYX	获取价格	Flash, 8MX16, 85ns, PBGA64, BGA-64
RC28F128P33B85A	ROCHESTER	获取价格	8MX16 FLASH 3V PROM, 85ns, PBGA64, BGA-64
RC28F128P33B85A	MICRON	获取价格	64Mb, 128Mb, 256Mb, 512Mb, Multilevel Cell, Parallel NOR Flash Memory
RC28F128P33BF60	NUMONYX	获取价格	NumonyxÂ® P33-65nm Flash Memory

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