5秒后页面跳转
RC28F00AP30TFA PDF预览

RC28F00AP30TFA

更新时间: 2024-09-17 14:59:03
品牌 Logo 应用领域
镁光 - MICRON /
页数 文件大小 规格书
86页 11765K
描述
65nm; MLC; 28F512P30B/E/TF, 28F00AP30B/E/TF, 28F00BP30EF

RC28F00AP30TFA 数据手册

 浏览型号RC28F00AP30TFA的Datasheet PDF文件第2页浏览型号RC28F00AP30TFA的Datasheet PDF文件第3页浏览型号RC28F00AP30TFA的Datasheet PDF文件第4页浏览型号RC28F00AP30TFA的Datasheet PDF文件第5页浏览型号RC28F00AP30TFA的Datasheet PDF文件第6页浏览型号RC28F00AP30TFA的Datasheet PDF文件第7页 
Numonyx® Axcell™ P30-65nm Flash Memory  
512-Mbit, 1-Gbit , 2-Gbit  
Datasheet  
Product Features  
„ High performance:  
„ Enhanced Security:  
— Absolute write protection: VPP = VSS  
— Power-transition erase/program lockout  
— Individual zero-latency block locking  
— Individual block lock-down capability  
— Password Access feature  
Easy BGA:  
— 100ns initial access time (512-Mbit, 1-Gbit)  
— 105ns initial access time (2-Gbit)  
— 25ns 16-word asynchronous-page read mode  
— 52MHz with zero WAIT states, 17ns clock-to-  
data output synchronous-burst read mode  
— 4-, 8-, 16- and continuous-word options for  
burst mode  
— One-Time Programmable Register:  
— 64 OTP bits, programmed with unique  
information by Numonyx  
— 2112 OTP bits, available for customer  
programming  
TSOP:  
— 110ns initial access time  
„ Software:  
Easy BGA and TSOP:  
— Buffered Enhanced Factory Programming at  
2.0MByte/s (typ) using 512-word buffer  
— 1.8V buffered programming at 1.46MByte/s  
(Typ) using 512-word buffer  
— 25µs (Typ) program suspend  
— 30µs (Typ) erase suspend  
®
— Numonyx Flash Data Integrator optimized  
— Basic Command Set and Extended Function  
Interface (EFI) Command Set compatible  
— Common Flash Interface capable  
„ Architecture:  
— Multi-Level Cell Technology: Highest Density  
at Lowest Cost  
„ Density and Packaging  
— Symmetrically-blocked architecture (512-  
Mbit, 1-Gbit, 2-Gbit)  
— 56-Lead TSOP (512-Mbit, 1-Gbit)  
— 64-Ball Easy BGA (512-Mbit, 1-Gbit, 2-Gbit)  
— 16-bit wide data bus  
— Asymmetrically-blocked architecture, Four 32-  
KByte parameter blocks: Top or Bottom  
configuration (512-Mbit, 1-Gbit)  
— 128-KByte array blocks  
„ Quality and Reliability  
— JESD47E Compliant  
— Blank Check to verify an erase block  
— Operating temperature: –40°C to +85°C  
— Minimum 100,000 erase cycles  
— 65nm process technology  
„ Voltage and Power:  
— VCC (core) voltage: 1.7V – 2.0V  
— VCCQ (I/O) voltage: 1.7V – 3.6V  
— Standby current: 70µA(Typ) for 512-Mbit,  
75µA(Typ) for 1-Gbit  
— Continuous synchronous read current (Easy  
BGA): 21mA (Typ)/24mA (Max) at 52MHz  
Datasheet  
1
Sept 2012  
Order Number: 208042-06  

RC28F00AP30TFA 替代型号

型号 品牌 替代类型 描述 数据表
PC28F00AP30TFA MICRON

完全替代

Numonyx® Axcell™ P30-65nm Flash Memory 512

与RC28F00AP30TFA相关器件

型号 品牌 获取价格 描述 数据表
RC28F00BM29EWH NUMONYX

获取价格

Flash, 128MX16, 100ns, PBGA64, 11 X 13 MM, 1 MM PITCH, BGA-64
RC28F00BM29EWHA MICRON

获取价格

Parallel NOR Flash Embedded Memory
RC28F00BM29EWL NUMONYX

获取价格

Flash, 128MX16, 100ns, PBGA64, 11 X 13 MM, 1 MM PITCH, BGA-64
RC28F128J3A_13 INTEL

获取价格

Intel StrataFlash® Memory
RC28F128J3A-110 INTEL

获取价格

Intel StrataFlash Memory (J3)
RC28F128J3A-115 INTEL

获取价格

Intel StrataFlash Memory (J3)
RC28F128J3A-120 INTEL

获取价格

Intel StrataFlash Memory (J3)
RC28F128J3A-125 INTEL

获取价格

Intel StrataFlash Memory (J3)
RC28F128J3A-150 INTEL

获取价格

3 Volt Intel StrataFlash⑩ Memory
RC28F128J3C-110 INTEL

获取价格

Intel StrataFlash Memory (J3)