Datasheet > RC10S08G

RC10S08G

更新时间： 2024-09-15 22:39:47

品牌	Logo	应用领域
SSE		电池
页数	文件大小	规格书
1页	16K
描述
SILICON GPP CELL RECTIFIER

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中文翻译

获取价格

数据手册

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RC10S08G 数据手册

SHANGHAI SUNRISE ELECTRONICS CO., LTD.

RC10S01G THRU RC10S10G

SILICON GPP

CELL RECTIFIER

TECHNICAL

SPECIFICATION

VOLTAGE: 100 TO 1000V CURRENT: 10A

FEATURES

• Glass passivated junction chip

• High surge capability

• Solderable electrode surfaces Ideal for hybrids

MECHANICAL DATA

• Polarity: Bottom or upper electrode denotes

cathode according to the notice

in package

Dimensions in inches and (millimeters)

MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS

(Single-phase, half-wave, resistive or inductive load rating at 25^oC, unless otherwise stated, for capacitive load, derate

current by 20%)

RC10S RC10S RC10S RC10S RC10S RC10S

RATINGS

SYMBOL

UNITS

01G

100

02G

200

140

200

04G

400

280

400

06G

600

420

600

08G

800

560

800

10G

1000

700

V_RRM

V_RMS

V_DC

Maximum Repetitive Peak Reverse Voltage

Maximum RMS Voltage

Maximum DC Blocking Voltage

100

1000

Maximum Average Forward Rectified Current

I_F(AV)

I_FSM

V_F

400

1.0

(T_a=55^oC)

(Note 2)

Peak Forward Surge Current (8.3ms single

half sine-wave superimposed on rated load)

Maximum Instantaneous Forward Voltage

(at rated forward current)

T_a=25^oC

T_a=150^oC

300

Maximum DC Reverse Current

µA

I_R

(at rated DC blocking voltage)

C_J

Typical Junction Capacitance

Typical Thermal Resistance

(Note 1)

(Note 3)

^oC/W

^oC

R_θ(ja)

-50 to +150

_STG,T_J

Storage and Operation Junction Temperature

Note:

1. Measured at 1 MHz and applied voltage of 4.0V_dc

2. When mounted to heat sink from body.

3. Thermal resistance from junction to ambient.

http://www.sse-diode.com

中文翻译

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