5秒后页面跳转
RBU803M PDF预览

RBU803M

更新时间: 2024-09-16 06:07:11
品牌 Logo 应用领域
RECTRON 整流二极管桥式整流二极管局域网
页数 文件大小 规格书
4页 170K
描述
SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURRENT 8.0 Amperes

RBU803M 技术参数

是否无铅: 不含铅是否Rohs认证: 符合
生命周期:Active包装说明:R-PSFM-T4
针数:4Reach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.75Is Samacsys:N
其他特性:UL RECOGNIZED配置:BRIDGE, 4 ELEMENTS
二极管元件材料:SILICON二极管类型:BRIDGE RECTIFIER DIODE
JESD-30 代码:R-PSFM-T4JESD-609代码:e3
最大非重复峰值正向电流:200 A元件数量:4
相数:1端子数量:4
最高工作温度:150 °C最低工作温度:-55 °C
最大输出电流:8 A封装主体材料:PLASTIC/EPOXY
封装形状:RECTANGULAR封装形式:FLANGE MOUNT
峰值回流温度(摄氏度):265认证状态:Not Qualified
最大重复峰值反向电压:200 V表面贴装:NO
端子面层:Matte Tin (Sn)端子形式:THROUGH-HOLE
端子位置:SINGLE处于峰值回流温度下的最长时间:NOT SPECIFIED
Base Number Matches:1

RBU803M 数据手册

 浏览型号RBU803M的Datasheet PDF文件第2页浏览型号RBU803M的Datasheet PDF文件第3页浏览型号RBU803M的Datasheet PDF文件第4页 
RBU801M  
THRU  
RBU807M  
SINGLE-PHASE GLASS PASSIVATED  
SILICON BRIDGE RECTIFIER  
VOLTAGE RANGE 50 to 1000 Volts CURRENT 8.0 Amperes  
FEATURES  
* Low leakage  
* Low forward voltage  
* Ideal for printed circuit boards  
* Surge overload rating: 200 amperes peak  
* Mounting position: Any  
* High forward surge current capability  
RBU  
MECHANICAL DATA  
UL listed the recognizde component dinrectory file # E252754  
*
* Epoxy: Device has UL flammability classification 94V-O  
Please See Page 3 for Dimension  
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS  
Ratings at 25 oC ambient temperature unless otherwise specified.  
Single phase, half wave, 60 Hz, resistive or inductive load.  
For capacitive load, derate current by 20%.  
O
MAXIMUM RATINGS (@ T  
A
=25 C unless otherwise noted)  
RATINGS  
Maximum Recurrent Peak Reverse Voltage  
Maximum RMS Voltage  
SYMBOL RBU801M RBU802M RBU803M RBU804M RBU805M RBU806M RBU807M  
UNITS  
V
V
50  
35  
50  
100  
70  
200  
140  
200  
400  
280  
400  
600  
420  
600  
800  
560  
800  
1000  
700  
Volts  
Volts  
Volts  
RRM  
RMS  
Maximum DC Blocking Voltage  
V
100  
1000  
DC  
O
Maximum Average Forward Rectified Current  
I
Amps  
Amps  
at T = *75 oC (Note 4)  
8.0  
C
Peak Forward Surge Current 8.3 ms single half sine-wave  
superimposed on rated load (JEDEC method)  
I
200  
FSM  
R
3.4  
26  
θ JC  
θ JA  
Typical Thermal Resistance (Note 1)  
0C/W  
0 C  
R
Operating and Storage Temperature Range  
T , T  
J STG  
-55 to + 150  
O
ELECTRICAL CHARACTERISTICS(@T =25 C unless otherwise noted)  
A
CHARACTERISTICS  
SYMBOL  
RBU801M  
RBU805M RBU806M RBU807M  
RBU802M RBU803M RBU804M  
1.1  
UNITS  
Volts  
Maximum Instantaneous Forward Voltage at 8.0A DC  
V
F
@T = 25oC  
A
Maximum DC Reverse Current  
at Rated DC Blocking Voltage  
2.0  
I
R
uAmps  
@T = 125oC  
A
500  
NOTES : 1. Thermal Resistance : Heat-sink case mounted or if PCB mounted.  
2. "Fully ROHS compliant", "100% Sn plating (Pb-free)".  
3. Equivalent to Vishay's GBU8 Series.  
2008-08  
4. "*" Heat Sink Temperature.  

与RBU803M相关器件

型号 品牌 获取价格 描述 数据表
RBU803M-B RECTRON

获取价格

Rectifier Diode,
RBU803M-B-HF RECTRON

获取价格

暂无描述
RBU804M RECTRON

获取价格

SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURR
RBU805M RECTRON

获取价格

SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURR
RBU805M-B-HF RECTRON

获取价格

Rectifier Diode,
RBU805M-C-HF RECTRON

获取价格

暂无描述
RBU806M RECTRON

获取价格

SINGLE-PHASE GLASS PASSIVATED SILICON BRIDGE RECTIFIER VOLTAGE RANGE 50 to 1000 Volts CURR
RBU806M-B RECTRON

获取价格

Rectifier Diode,
RBU806M-B-HF RECTRON

获取价格

Rectifier Diode,
RBU806M-C-HF RECTRON

获取价格

Rectifier Diode,