Datasheet > RBSS84

RBSS84

更新时间： 2024-06-27 12:11:43

品牌	Logo	应用领域
RECTRON		/
页数	文件大小	规格书
6页	951K
描述
Vdss (V) : 50 V;Id @ 25C (A) : 0.13 A;Rds-on (typ) (mOhms) : 5000 mOhms;Maximum Power Dissipation (W) : 0.225 W;Input Capacitance (Ciss) : 38 pF;Polarity : P-Channel;Mounting Style : SMD/SMT;Package / Case : SOT-23

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RBSS84 数据手册

RBSS84

P-Channel Power MOSFET

FEATURES

●

Energy efficient

●

Halogen Free.

Package Marking and Ordering Information

Device Marking

Device

Device Package

RBSS84

SOT23

SOT23(TO-236)

MAXIMUM RATINGS(Ta = 25º C)

Parameter

Drain–Source Voltage

Gate–to–Source Voltage – Continuous

Drain Current

Symbol

VDSS

VGS

Limits

-50

Unit

±20

-130

-520

– Continuous TA = 25°C

– Pulsed (tp≤10μs)

IDM

225

1.8

Total Device Dissipation,

FR−5 Board (Note 1) @ TA = 25ºC

Derate above 25ºC

mW/ºC

ºC/W

Thermal Resistance,

Junction–to–Ambient(Note 1)

RΘJA

TJ,Tstg

556

−55∼+150

260

Junction and Storage temperature

Maximum Lead Temperature for

Soldering Purposes, for 10 seconds

ºC

2023-05/74

REV:O

12 3 4 5 6

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