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RB706F-40 PDF预览

RB706F-40

更新时间: 2024-11-19 14:54:15
品牌 Logo 应用领域
先科 - SWST 肖特基二极管
页数 文件大小 规格书
3页 142K
描述
肖特基二极管

RB706F-40 数据手册

 浏览型号RB706F-40的Datasheet PDF文件第2页浏览型号RB706F-40的Datasheet PDF文件第3页 
RB706F-40  
Silicon Epitaxial Schottky Barrier Diode  
3
Features  
High reliability  
1
2
Low reverse current  
SOT-323 Plastic Packing  
Marking Code :ZA  
O
Absolute Maximum Ratings (Ta = 25 C)  
Parameter  
Symbol  
VRM  
VR  
Value  
Unit  
Repetitive Peak Reverse Voltage  
Reverse Voltage  
45  
V
V
40  
30  
IF(AV)  
IFSM  
Tj  
Average Forward Rectified Current  
Peak Forward Surge Current (t = 8.3 ms)  
Junction Temperature  
mA  
mA  
200  
O
C
125  
O
Tstg  
C
Storage Temperature Range  
- 55 to + 125  
O
Characteristics at Ta = 25 C  
Parameter  
Symbol  
V(BR)R  
VF  
Min.  
45  
Typ.  
-
Max.  
-
Unit  
Reverse Breakdown Voltage  
at IR = 10 µA  
V
V
Forward Voltage  
at IF = 1 mA  
-
-
-
-
-
0.37  
Reverse Current  
at VR = 10 V  
IR  
1
-
µA  
pF  
Capacitance between Terminals  
at VR = 1 V, f = 1 MHz  
CT  
2.5  
®
1 / 3  
Dated: 14/05/2021 Rev: 02  

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