Datasheet > RB706F-40

RB706F-40

更新时间： 2023-12-06 20:07:44

品牌	Logo	应用领域
先科 - SWST		肖特基二极管
页数	文件大小	规格书
3页	142K
描述
肖特基二极管

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RB706F-40 数据手册

RB706F-40

Silicon Epitaxial Schottky Barrier Diode

Features

•

High reliability

Low reverse current

SOT-323 Plastic Packing

Marking Code :ZA

Absolute Maximum Ratings (T_a= 25 C)

Parameter

Symbol

V_RM

V_R

Value

Unit

Repetitive Peak Reverse Voltage

Reverse Voltage

I_F(AV)

I_FSM

T_j

Average Forward Rectified Current

Peak Forward Surge Current (t = 8.3 ms)

Junction Temperature

200

125

T_stg

Storage Temperature Range

- 55 to + 125

Characteristics at T_a= 25 C

Parameter

Symbol

V_(BR)R

V_F

Min.

Typ.

Max.

Unit

Reverse Breakdown Voltage

at I_R= 10 µA

Forward Voltage

at I_F= 1 mA

0.37

Reverse Current

at V_R= 10 V

I_R

µA

Capacitance between Terminals

at V_R= 1 V, f = 1 MHz

C_T

2.5

1 / 3

Dated: 14/05/2021 Rev: 02

12 3

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