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RB557WFH PDF预览

RB557WFH

更新时间: 2024-01-12 23:19:31
品牌 Logo 应用领域
罗姆 - ROHM 整流二极管肖特基二极管光电二极管
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RB557WFH 数据手册

 浏览型号RB557WFH的Datasheet PDF文件第2页浏览型号RB557WFH的Datasheet PDF文件第3页浏览型号RB557WFH的Datasheet PDF文件第4页 
Data Sheet  
Schottky Barrier Diode  
RB557W  
Applications  
Dimensions (Unit : mm)  
Land size figure (Unit : mm)  
General rectification  
0.5  
0.5  
1.6±0.2  
0.3±0.1  
0.15±0.05  
ꢀꢀꢀ 0.05  
(3)  
Features  
0.7  
1)Ultra small mold type. (EMD3)  
2)Low VF  
0~0.1  
3)High reliability  
0.6  
0.6  
(1)  
(2)  
0.5  
0.2±0.1  
ꢀꢀ-0.05  
EMD3  
0.55±0.1  
0.7±0.1  
0.5  
1.0±0.1  
Construction  
Silicon epitaxial planar  
Structure  
ROHM : EMD3  
JEDEC : SOT-416  
JEITA : SC-75A  
dot (year week factory  
Taping specifications (Unit : mm)  
φ1.5 0.1  
2.0±0.05  
0.3±0.1  
4.0±0.1  
0  
1.8±0.1  
φ0.5±0.1  
0.9±0.2  
Absolute maximum ratings (Ta=25°C)  
Parameter  
Limits  
30  
Symbol  
Unit  
V
Reverse voltage (DC)  
VR  
Io  
Average rectified forward current (*1)  
Forward current surge peak (60Hz1cyc) (*1)  
Junction temperature  
100  
500  
125  
mA  
mA  
°C  
IFSM  
Tj  
Storage temperature  
40 to 125  
Tstg  
°C  
(*1) Rating of per diode  
Electrical characteristics (Ta=25°C)  
Parameter  
Conditions  
IF=10mA  
Symbol  
VF1  
Min.  
Typ.  
Max.  
Unit  
-
-
-
-
-
-
0.35  
0.49  
10  
V
V
Forward voltage  
Reverse current  
VF2  
IF=100mA  
VR=10V  
IR  
μA  
www.rohm.com  
2011.04 - Rev.A  
© 2011 ROHM Co., Ltd. All rights reserved.  
1/3  

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