Datasheet > RB551HP-30

RB551HP-30

更新时间： 2024-11-27 14:53:55

品牌	Logo	应用领域
先科 - SWST		肖特基二极管
页数	文件大小	规格书
3页	152K
描述
肖特基二极管

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RB551HP-30 数据手册

RB551HP-30

Silicon Epitaxial Schottky Barrier Diode

PINNING

DESCRIPTION

Cathode

Features

Anode

• Low forward voltage

• High reliability

Transparent top view

Simplified outline DFN1006-2H and symbol

Applications

• Switching regulators

• High-frequencyrectification

Absolute Maximum Ratings (T_a= 25℃)

Parameter

Symbol

V_RM

Value

Unit

Peak Reverse Voltage

Reverse Voltage

V_R

Average Rectified Forward Current

I_F(AV)

I_FRM

500

Repetitive Peak Forward Current ( tp ≤ 1ms, δ≤ 0.25)

Non-Repetitive Peak Forward Surge Current

(10 ms Single Half Sine-Wave)

I_FSM

Power Dissipation

P_tot

200

Operating Junction and Storage Temperature Range

T_j, T_stg

- 65 to + 150

℃

Thermal Characteristics

Value

625

Parameter

Symbol

R_θJA

Unit

Typical Thermal Resistance - Junction to Ambient ¹⁾

¹⁾Device mounted on FR-4 substrate PC board, 2oz copper, with minimum recommended pad layout.

℃/W

Characteristics at T_a= 25℃

Parameter

Symbol

V_(BR)R

Min.

Max.

Unit

Reverse Breakdown Voltage

at I_R= 500 µA

Forward Voltage

at I_F= 0.1 mA

at I_F= 1 mA

at I_F= 10 mA

at I_F= 100 mA

at I_F= 500 mA

0.18

0.2

0.27

0.36

0.52

V_F

Reverse Current

at V_R= 10 V

I_R

100

μA

1 / 3

Dated: 26/07/2023 Rev : 01

12 3

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