Datasheet > RB550VA-30

RB550VA-30

更新时间： 2024-11-27 14:55:51

品牌	Logo	应用领域
先科 - SWST		肖特基二极管
页数	文件大小	规格书
3页	275K
描述
肖特基二极管

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中文翻译

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RB550VA-30 数据手册

RB550VA-30

Silicon Epitaxial Planar Schottky Barrier Diode

PINNING

DESCRIPTION

Cathode

Features

Anode

• Low forward voltage, low reverse current

• Small plastic SMD SOD-323 package

• High reliability

Top View

Marking Code: "S"

Simplified outline SOD-323 and symbol

Absolute Maximum Ratings (T_a= 25℃)

Parameter

Symbol

V_RRM

V_R

Value

Unit

Repetitive Peak Reverse Voltage

Reverse Voltage

Average Forward Rectified Current

Peak Forward Surge Current (tp = 10 ms)

Junction Temperature

I_F(AV)

I_FSM

T_j

150

℃

Storage Temperature Range

T_stg

- 40 to + 150

Characteristics at T_a= 25℃

Parameter

Symbol

V_(BR)R

Min.

Typ.

Max.

Unit

Reverse Breakdown Voltage

at I_R= 100 µA

Forward Voltage

at I_F= 700 mA

at I_F= 1 A

V_F

0.48

0.52

Reverse Current

at V_R= 10 V

I_R

µA

Total Capacitance

at V_R= 10 V, f = 1 MHz

C_T

1 / 3

Dated: 01/04/2021 Rev: 04

12 3

中文翻译

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