Datasheet > RB521G-30

RB521G-30

更新时间： 2023-12-06 20:02:54

品牌	Logo	应用领域
先科 - SWST		肖特基二极管
页数	文件大小	规格书
3页	131K
描述
肖特基二极管

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中文翻译

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RB521G-30 数据手册

RB521G-30

Silicon Epitaxial Planar Schottky Barrier Diode

PINNING

DESCRIPTION

Cathode

Features

• Low forward voltage

Anode

Applications

• For rectifying small power application

Top View

Simplified outline SOD-523 and symbol

Absolute Maximum Ratings (T_a= 25℃)

Parameter

Symbol

V_R

Value

Unit

Reverse Voltage

Average Rectified Forward Current

Peak Forward Surge Current (8.3 ms)

Junction Temperature

I_F(AV)

I_FSM

T_j

100

125

℃

Storage Temperature Range

T_stg

- 40 to + 125

Characteristics at T_a= 25℃

Parameter

Symbol

V_(BR)R

V_F

Min.

Max.

Unit

Reverse Breakdown Voltage

at I_R= 100 µA

Forward Voltage

at I_F= 10 mA

0.35

Reverse Current

at V_R= 10 V

I_R

µA

1 / 3

Dated : 10/01/2023 Rev: 02

12 3

中文翻译

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与RB521G-30相关器件

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RB521G-30_05	ROHM	获取价格	Schottky barrier diode
RB521G-30FH	ROHM	获取价格	Rectifier Diode, Schottky, 1 Element, 0.1A, 30V V(RRM), Silicon, VMD2, 2 PIN
RB521G-30G	SEMTECH	获取价格	Silicon Epitaxial Planar Schottky Barrier Diode
RB521G-30G	SWST	获取价格	肖特基二极管
RB521G30-G	COMCHIP	获取价格	SMD Schottky Barrier Diode
RB521G-30HF	COMCHIP	获取价格	DIODE SCHOTTKY 30V 100MA SOD723
RB521G-30T2R	ROHM	获取价格	Schottky barrier diode RB521G-30
RB521G-30-TP	MCC	获取价格	Rectifier Diode, Schottky, 1 Element, 0.1A, 30V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC P
RB521G-30-TP-HF	MCC	获取价格	Rectifier Diode, Schottky, 1 Element, 0.1A, 30V V(RRM), Silicon, HALOGEN FREE AND ROHS COM
RB521G-40	ROHM	获取价格	Rectifier Diode, Schottky, 1 Element, 0.1A, 40V V(RRM), Silicon, VMD2, 2 PIN