Data Sheet
Schottky Barrier Diode
RB520S-40
Applications
Dimensions(Unit : mm)
Land size figure(Unit : mm)
Rectifying small power
0.8±0.05
0.12±0.05
0.8
Features
1)Ultra small mold type. (EMD2)
2)Low IR
3)High reliability
EMD2
Construction
Silicon epitaxial
0.3±0.05
0.6±0.1
Structure
ROHM : EMD2
JEDEC :SOD-523
JEITA : SC-79
dot (year week factory)
Taping specifications(Unit : mm)
0.2±0.05
φ1.5±0.05
2.0±0.05
4.0±0.1
φ1.55±0.05
0.2
φ0.5
4.0±0.1
2.0±0.05
0.95±0.06
0.90±0.05
空ポケット
Empty pocket
0.76±0.05
0.75±0.05
0
Absolute maximum ratings(Ta=25°C)
Parameter
Reverse voltage (repetitive peak)
Reverse voltage (DC)
Limits
Symbol
VRM
VR
Unit
V
40
40
V
Average rectified forward current
Forward current surge peak
Junction temperature
200
1
Io
mA
A
IFSM
Tj
125
°C
°C
Storage temperature
-40 to +125
Tstg
Electrical characteristics(Ta=25°C)
Parameter
Symbol
Min.
Typ.
Max.
Unit
V
Conditions
VF
VF
IR
-
-
-
-
-
-
-
-
0.39
0.55
1
IF=10mA
Forward voltage
Reverse current
V
IF=100mA
VR=10V
VR=40V
μA
μA
IR
10
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2011.03 - Rev.E