Datasheet > RB425D

RB425D

更新时间： 2024-12-01 06:07:07

品牌	Logo	应用领域
科信 - KEXIN		二极管
页数	文件大小	规格书
1页	34K
描述
Shottky barrier diode

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中文翻译

获取价格

数据手册

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RB425D 数据手册

SMD Type

Diodes

Shottky barrier diode

RB425D

SOT-23

Unit: mm

+0.1

2.9

-0.1

+0.1

0.4

-0.1

Features

Small mold type.(SMD3)

Low IR.

+0.1

0.95

-0.1

+0.05

0.1

-0.01

+0.1

1.9

-0.1

High reliability.

1.Base

2.Emitter

3.collector

Absolute Maximum Ratings Ta = 25

Parameter

Reverse voltage (repetitive peak)

DC reverse voltage

Symbol

V^RM

V^R

Limits

Unit

Average rectified forward current *

Forward current surge peak (60 Hz 1cyc) *

Junction temperature

I^O

100

I^FSM

T^j

125

Storage temperature

Tstg

-40 to + 125

* Rating of per diode

Electrical Characteristics Ta = 25

Parameter

Forward voltage

Symbol

V^F

Conditions

I^F= 100 mA

Min

Typ

Max

0.55

0.34

Unit

I^F= 10 mA

Reverse current

I^R

VR = 10 V

Capacitance between terminals

C^T

VR = 10 V, f = 1.0 MHz

6.0

Marking

D3L

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