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RB228NS150TL PDF预览

RB228NS150TL

更新时间: 2024-11-11 20:10:43
品牌 Logo 应用领域
罗姆 - ROHM 光电二极管
页数 文件大小 规格书
6页 654K
描述
Rectifier Diode, Schottky, 1 Phase, 2 Element, 15A, 150V V(RRM), Silicon, TO-263AB, ROHS COMPLIANT, LPDS, TO-263S, 3/2 PIN

RB228NS150TL 技术参数

是否Rohs认证: 符合生命周期:Active
包装说明:ROHS COMPLIANT, LPDS, TO-263S, 3/2 PINReach Compliance Code:not_compliant
ECCN代码:EAR99HTS代码:8541.10.00.80
风险等级:5.67其他特性:HIGH RELIABILITY
应用:GENERAL PURPOSE外壳连接:CATHODE
配置:COMMON CATHODE, 2 ELEMENTS二极管元件材料:SILICON
二极管类型:RECTIFIER DIODE最大正向电压 (VF):0.88 V
JEDEC-95代码:TO-263ABJESD-30 代码:R-PSSO-G2
最大非重复峰值正向电流:100 A元件数量:2
相数:1端子数量:2
最高工作温度:150 °C最大输出电流:15 A
封装主体材料:PLASTIC/EPOXY封装形状:RECTANGULAR
封装形式:SMALL OUTLINE峰值回流温度(摄氏度):NOT SPECIFIED
最大重复峰值反向电压:150 V最大反向电流:25 µA
表面贴装:YES技术:SCHOTTKY
端子形式:GULL WING端子位置:SINGLE
处于峰值回流温度下的最长时间:NOT SPECIFIEDBase Number Matches:1

RB228NS150TL 数据手册

 浏览型号RB228NS150TL的Datasheet PDF文件第2页浏览型号RB228NS150TL的Datasheet PDF文件第3页浏览型号RB228NS150TL的Datasheet PDF文件第4页浏览型号RB228NS150TL的Datasheet PDF文件第5页浏览型号RB228NS150TL的Datasheet PDF文件第6页 
Schottky Barrier Diode  
RB228NS150  
Data Sheet  
lApplication  
lDimensions (Unit : mm)  
lLand Size Figure (Unit : mm)  
11  
Switching power supply  
(2)  
9.9  
2.5  
RB228  
NS150  
lFeatures  
1
1) Cathode common type  
(1)  
(3)  
2) High reliability  
2.54  
2.54  
LPDS  
Super low IR  
3)  
lStructure  
(2)Cathode  
ROHM : LPDS  
lConstruction  
JEITA : TO263S  
1
: Manufacture Date  
Silicon epitaxial planar type  
(1) Anode  
(3) Anode  
lTaping Dimensions (Unit : mm)  
lAbsolute Maximum Ratings (Tc= 25°C)  
Parameter  
Symbol  
Conditions  
Duty0.5  
Limits  
Unit  
VRM  
VR  
Io  
150  
150  
30  
Repetitive Peak Reverse Voltage  
Reverse Voltage  
V
V
Direct Reverse Voltage  
Glass epoxy board mounted, 60Hz half sin wave,  
resistive load, IO/2 per diode, Tc=100ºC Max.  
60Hz half sin wave, Non-repetitive at  
Ta=25ºC, 1cycle, per diode  
Average Forward Rectified Current  
Non-repetitive Forward Current Surge Peak  
A
IFSM  
Tj  
100  
150  
A
-
-
Operating Junction Temperature  
Storage Temperature  
°C  
Tstg  
-55 to +150 °C  
lElectrical and Thermal Characteristics (Tj= 25°C)  
Parameter  
Forward Voltage  
Conditions  
IF=15A  
Symbol  
VF  
Min. Typ. Max. Unit  
-
-
-
-
-
-
0.88  
25  
2
V
VR=150V  
IR  
Reverse Current  
mA  
Rth(j-c)  
Junction to case  
°C / W  
Thermal Resistance  
www.rohm.com  
© 2014 ROHM Co., Ltd. All rights reserved.  
2014.11 - Rev.A  
1/5  

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