Datasheet > RB160MM-60_16

RB160MM-60_16

更新时间： 2024-10-03 01:22:11

品牌	Logo	应用领域
罗姆 - ROHM		/
页数	文件大小	规格书
9页	667K
描述
Schottky Barrier Diode

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中文翻译

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数据手册

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RB160MM-60_16 数据手册

Schottky Barrier Diode

RB160MM-60

Data Sheet

lApplication

lDimensions (Unit : mm)

lLand Size Figure (Unit : mm)

General rectification

1.2

0.1

0.1±

0.05

1.6±0.1

lFeatures

1) Small power mold type

(PMDU)

PMDU

Cathode

0.9±0.1

lStructure

0.8±0.1

2) High reliability

ROHM : PMDU

JEDEC : SOD-123FL

Low V_F

: Manufacture Date

Anode

lConstruction

lTaping Dimensions (Unit : mm)

Silicon epitaxial planar type

0.25±0.05

φ 1.55±0.05

f1.550.05

2.0±0.05

4.0±0.1

φ 1.0±0.1

f1.00.1

1.81±0.1

1.5MAX

lAbsolute Maximum Ratings (T_c= 25°C)

Parameter

Symbol

Conditions

Limits

Unit

V_RM

V_R

I_o

Duty≦0.5

Repetitive Peak Reverse Voltage

Reverse Voltage

Direct Reverse Voltage

Glass epoxi mounted,

60Hz half sin Wave, resistive load

60Hz half sin wave, one cycle,

Non-repetitive at T_a=25°C

Average Forward Rectified Current

Non-repetitive Forward Current Surge Peak

I_FSM

T_j

150

Operating Junction Temperature

Storage Temperature

°C

T_stg

-40 to +150 °C

lElectrical Characteristics (T_j= 25°C)

Parameter

Forward Voltage

Conditions

I_F=1.0A

Symbol

V_F1

Min. Typ. Max. Unit

0.49 0.55

7.0 50

V_R=60V

Reverse Current

I_R

www.rohm.com

2016.05 - Rev.D

1/5

12 3 4 5 6 7...9

中文翻译

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