Datasheet > RB151-LF

RB151-LF

更新时间： 2024-09-23 19:49:15

品牌	Logo	应用领域
WTE		二极管
页数	文件大小	规格书
4页	66K
描述
Bridge Rectifier Diode, 1 Phase, 1.5A, 100V V(RRM), Silicon, ROHS COMPLIANT, PLASTIC, WOB, 4 PIN

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RB151-LF 数据手册

WTE

POWER SEMICONDUCTORS

RB150 – RB1510

1.5A SINGLE-PHASE BRIDGE RECTIFIER

Features



Diffused Junction



Low Forward Voltage Drop

High Current Capability

High Reliability

High Surge Current Capability

Ideal for Printed Circuit Boards

Recognized File # E157705

WOB

Min

Dim

Max

9.10

5.50

—

8.60

5.00

21.90

19.00

0.69

Mechanical Data



—

Case: WOB, Molded Plastic

Terminals: Plated Leads Solderable per

MIL-STD-202, Method 208

0.80

5.60

4.60

All Dimensions in mm



Polarity: As Marked on Body

Weight: 1.1 grams (approx.)

Mounting Position: Any

Marking: Type Number

Lead Free: For RoHS / Lead Free Version,

Add “-LF” Suffix to Part Number, See Page 4

Maximum Ratings and Electrical Characteristics @T_A=25°C unless otherwise specified

Single Phase, half wave, 60Hz, resistive or inductive load.

For capacitive load, derate current by 20%.

Characteristic

Symbol RB150 RB151 RB152 RB154 RB156 RB158 RB1510 Unit

Peak Repetitive Reverse Voltage

Working Peak Reverse Voltage

DC Blocking Voltage

VRRM

VRWM

100

200

140

400

600

420

800

560

1000

700

RMS Reverse Voltage

VR(RMS)

280

1.5

Average Rectified Output Current

(Note 1)

@T_A= 50°C

Non-Repetitive Peak Forward Surge Current

8.3ms Single half sine-wave superimposed on

rated load (JEDEC Method)

IFSM

Forward Voltage (per element)

@I_F= 1.5A

VFM

IRM

1.0

Peak Reverse Current

At Rated DC Blocking Voltage

@T_A= 25°C

@T_A= 100°C

5.0

500

µA

Operating Temperature Range

Storage Temperature Range

-55 to +125

-55 to +150

°C

TSTG

Note: 1. Leads maintained at ambient temperature at a distance of 9.5mm from the case.

RB150 – RB1510

1 of 4

12 3 4

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