Datasheet > RB085B-30_09

RB085B-30_09

更新时间： 2024-09-25 06:07:07

品牌	Logo	应用领域
罗姆 - ROHM		肖特基二极管
页数	文件大小	规格书
4页	444K
描述
Schottky Barrier Diode

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中文翻译

获取价格

数据手册

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RB085B-30_09 数据手册

Schottky Barrier Diode

RB085B-30

zApplications

zDimensions(Unit : mm)

zLand size figure(Unit : mm)

General rectification

6.0

ꢀꢀꢀ

zFeatures

1.6

1)Power mold type.(CPD)

2)Low V_F

3)High reliability

CPD

2.3 2.3

zConstruction

zStructure

(2)

Silicon epitaxial planar

(1) (3)

zTaping specifications(Unit : mm)

zAbsolute maximum ratings(Ta=25°C)

Parameter

Limits

Symbol

V_RM

V_R

Unit

Reverse voltage (repetitive peak)

Reverse voltage (DC)

Average rectified forward current(*1)

Forward current surge peak (60Hz / 1cyc)(*1)

Junction temperature

I_FSM

150

°C

Storage temperature

-40 to +150

Tstg

(*1)Business frequencies, Rating of R-load, 1/2 Io per diode, Tc=105°C

zElectrical characteristics(Ta=25°C)

Parameter

Conditions

Symbol

V_F

Min.

Typ.

Max.

0.48

300

6.0

Unit

Forward voltage

Reverse current

I_F=4.0A

V_R=30V

I_R

µA

Thermal impedance

junction to case

θjc

°C/W

www.rohm.com

2009.11 - Rev.E

1/3

12 3 4

中文翻译

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