RB080AR-40
Schottky Barrier Diode
Data sheet
●Outline
V
40
4.0
40
V
A
A
R
I
F
I
FSM
●Features
●Inner Circuit
High reliability
Wafer level chip size package
Low V
F
●Application
●Packaging Specifications
Packing
Embossed Tape
General rectification
180
8
7000
T7R
F
Reel Size(mm)
Taping Width(mm)
Quantity(pcs)
●Structure
Epitaxial planar
Taping Code
Marking
(T = 25ºC unless otherwise stated)
●Absolute Maximum Ratings
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ
ꢀ ꢀ ꢀ ꢀ
c
Parameter
Repetitive peak reverse voltage
Reverse voltage
Symbol
Conditions
Duty≦0.5
Reverse direct voltage
Glass epoxy mounted、DCcurrent
60Hz half sin waveform
tp=5ms, square wave
Limits
40
40
4.0
40
40
Unit
V
V
A
A
V
RM
V
R
I
DC forward current
F
I
FSM-cyc
Non-repetitive peak surge
forward current
I
A
℃
FSM-t
(1)
T
j
T
stg
-
-
150
-55 ~ 150
Junction temperature
Storage temperature
℃
Note(1) To avoid occurrence of thermal runaway, actual board is to be designed to fulfill dP /dT<1/R
d
j
th(j-a)
(T = 25ºC unless otherwise stated)
●Characteristics
Parameter
Forward voltage
ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ ꢀ
j
Symbol
Conditions
I =4.0A
F
V =40V
R
Min. Typ. Max. Unit
V
-
-
-
-
0.53 0.63
V
F
I
R
Reverse current
60
110
25
200 μA
C
t
V =10V f=1.0MHz
Capacitance between terminals
Reverse recovery time
-
-
pF
ns
R
I = I =100mA I =10mA
F
trr
R
rr
※Caution:static electricity
Attention
www.rohm.com
©2023- ROHMCo., Ltd.All rights reserved.
1/5
2023/05/10_Rev.002