是否Rohs认证: | 不符合 | 生命周期: | Active |
Reach Compliance Code: | not_compliant | 风险等级: | 5.77 |
JESD-609代码: | e0 | 峰值回流温度(摄氏度): | NOT SPECIFIED |
端子面层: | TIN LEAD | 处于峰值回流温度下的最长时间: | NOT SPECIFIED |
Base Number Matches: | 1 |
型号 | 品牌 | 描述 | 获取价格 | 数据表 |
2N1131E3 | MICROSEMI | Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-39, |
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2N1131J | RAYTHEON | Medium Current General Purpose Amplifiers and Switches |
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2N1131L | MICROSEMI | LOW POWER PNP SILICON TRANSISTOR |
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2N1131L | SEME-LAB | Bipolar PNP Device in a Hermetically sealed TO5 |
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2N1131LE3 | MICROSEMI | Small Signal Bipolar Transistor, 0.6A I(C), 40V V(BR)CEO, 1-Element, PNP, Silicon, TO-5, |
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2N1132 | SEME-LAB | SILICON PLANAR PNP TRANSISTOR |
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