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RA35H1516M PDF预览

RA35H1516M

更新时间: 2024-01-13 11:34:36
品牌 Logo 应用领域
三菱 - MITSUBISHI 射频和微波射频放大器微波放大器无线高功率电源
页数 文件大小 规格书
8页 77K
描述
154-162MHz 40W 12.5V MOBILE RADIO

RA35H1516M 技术参数

生命周期:ObsoleteReach Compliance Code:unknown
风险等级:5.82Is Samacsys:N
特性阻抗:50 Ω构造:MODULE
最大输入功率 (CW):20 dBm最大工作频率:162 MHz
最小工作频率:154 MHz最高工作温度:110 °C
最低工作温度:-30 °C射频/微波设备类型:NARROW BAND HIGH POWER
最大电压驻波比:3Base Number Matches:1

RA35H1516M 数据手册

 浏览型号RA35H1516M的Datasheet PDF文件第2页浏览型号RA35H1516M的Datasheet PDF文件第3页浏览型号RA35H1516M的Datasheet PDF文件第4页浏览型号RA35H1516M的Datasheet PDF文件第5页浏览型号RA35H1516M的Datasheet PDF文件第6页浏览型号RA35H1516M的Datasheet PDF文件第7页 
MITSUBISHI RF MOSFET MODULE  
OBSERVE HANDLING PRECAUTIONS  
RA35H1516M  
154-162MHz 40W 12.5V MOBILE RADIO  
DESCRIPTION  
BLOCK DIAGRAM  
The RA35H1516M is a 40-watt RF MOSFET Amplifier  
Module for 12.5-volt mobile radios that operate in the 154- to  
162-MHz range.  
2
3
The battery can be connected directly to the drain of the  
enhancement-mode MOSFET transistors. Without the gate  
voltage (VGG=0V), only a small leakage current flows into the  
drain and the RF input signal attenuates up to 60 dB. The output  
power and drain current increase as the gate voltage increases.  
With a gate voltage around 4V (minimum), output power and  
drain current increases substantially. The nominal output power  
becomes available at 4.5V (typical) and 5V (maximum). At  
VGG=5V, the typical gate current is 1 mA.  
1
4
This module is designed for non-linear FM modulation, but may  
also be used for linear modulation by setting the drain quiescent  
current with the gate voltage and controlling the output power with  
the input power.  
1
RF Input (Pin)  
3
4
5
Gate Voltage (VGG), Power Control  
Drain Voltage (VDD), Battery  
FEATURES  
RF Output (Pout  
)
• Enhancement-Mode MOSFET Transistors  
(IDD@0 @ VDD=12.5V, VGG=0V)  
RF Ground (Case)  
• Pout>40W, hT>50% @ VDD=12.5V, VGG=5V, Pin=50mW  
• Low-Power Control Current IGG=1mA (typ) at VGG=5V  
• Module Size: 66 x 21 x 9.88 mm  
• Linear operation is possible by setting the quiescent drain  
current with the gate voltage and controlling the output power  
with the input power  
ORDERING INFORMATION:  
ORDER NUMBER  
RA35H1516M-E01  
SUPPLY FORM  
Antistatic tray,  
10 modules/tray  
RA35H1516M-01  
(Japan - packed without desiccator)  
RA35H1516M  
15 April 2003  
MITSUBISHI ELECTRIC  
1/8  

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