< Silicon RF Power Modules >
RA33H1516M1
RoHS Compliance, 154-164MHz 33W 12.5V 2 Stage Amp. For MOBILE RADIO
DESCRIPTION
BLOCK DIAGRAM
The RA33H1516M1 is a 33watt RF MOSFET Amplifier Module for
12.5volt mobile radios that operate in the 154- to 164MHz range.
The battery can be connected directly to the drain of the
enhancement-mode MOSFET transistors. The output power and
drain current increase as the gate voltage increases. With a gate
voltage around 3.0V (minimum), output power and drain current
increases substantially. The nominal output power becomes
available at 4V (typical) and 5V (maximum). At VGG=5V, the typical
gate current is 1 mA.
2
3
1
4
5
This module is designed for non-linear FM modulation.
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RF Input (Pin)
2
3
4
5
Gate Voltage (VGG), Power Control
Drain Voltage (VDD), Battery
FEATURES
• Enhancement-Mode MOSFET Transistors
(IDD0 @ VDD=12.5V, VGG=0V)
RF Output (Pout
)
• Pout>33W, T>50% @ VDD=12.5V, VGG=5V, Pin=10mW
• Broadband Frequency Range: 154-164MHz
• Low-Power Control Current IGG=1mA (typ) at VGG=5V
• Module Size: 46 x 14.4 x 6.3 mm
RF Ground (Case)
PACKAGE CODE: H57
RoHS COMPLIANCE
• RA33H1516M1-301 is a RoHS compliant product.
• RoHS compliance is indicate by the letter “G301” after the Lot Marking.
• This product include the lead in the Glass of electronic parts and the lead in
electronic Ceramic parts.
However, it is applicable to the following exceptions of RoHS Directions.
Electrical and electronic components containing lead in a glass or ceramic
other than dielectric ceramic in capacitors, e.g. piezoelectronic devices,
or in a glass or ceramic matrix compound.
ORDERING INFORMATION:
ORDER NUMBER
SUPPLY FORM
Antistatic tray,
20 modules/tray
RA33H1516M1-301
Publication Date : Jan.2013
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