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R3708FC44W PDF预览

R3708FC44W

更新时间: 2024-11-05 20:41:31
品牌 Logo 应用领域
IXYS 栅极
页数 文件大小 规格书
12页 542K
描述
Assymetric SCR, 7364A I(T)RMS, 6275000mA I(T), 4400V V(DRM), 2900V V(RRM), 1 Element, 101A322, 3 PIN

R3708FC44W 技术参数

生命周期:Obsolete包装说明:DISK BUTTON, O-CXDB-X3
针数:3Reach Compliance Code:unknown
HTS代码:8541.30.00.80风险等级:5.84
Is Samacsys:N标称电路换相断开时间:300 µs
配置:SINGLE关态电压最小值的临界上升速率:200 V/us
最大直流栅极触发电流:600 mA最大直流栅极触发电压:3 V
最大维持电流:1000 mAJESD-30 代码:O-CXDB-X3
最大漏电流:150 mA通态非重复峰值电流:50000 A
元件数量:1端子数量:3
最大通态电流:6275000 A最高工作温度:125 °C
最低工作温度:-40 °C封装主体材料:CERAMIC, METAL-SEALED COFIRED
封装形状:ROUND封装形式:DISK BUTTON
认证状态:Not Qualified最大均方根通态电流:7364 A
断态重复峰值电压:4400 V重复峰值反向电压:2900 V
子类别:Silicon Controlled Rectifiers表面贴装:YES
端子形式:UNSPECIFIED端子位置:UNSPECIFIED
触发设备类型:ASSYMETRIC SCRBase Number Matches:1

R3708FC44W 数据手册

 浏览型号R3708FC44W的Datasheet PDF文件第2页浏览型号R3708FC44W的Datasheet PDF文件第3页浏览型号R3708FC44W的Datasheet PDF文件第4页浏览型号R3708FC44W的Datasheet PDF文件第5页浏览型号R3708FC44W的Datasheet PDF文件第6页浏览型号R3708FC44W的Datasheet PDF文件第7页 
Date:- 17 Oct, 2007  
Data Sheet Issue:- 4  
WESTCODE  
An IXYS Company  
Distributed Gate Asymmetric Thyristor  
Type R3708FC40# to R3708FC45#  
(Old Type Number: R1386CH40-45)  
Absolute Maximum Ratings  
MAXIMUM  
VOLTAGE RATINGS  
UNITS  
LIMITS  
VDRM  
VDSM  
VRRM  
VRSM  
Repetitive peak off-state voltage, (note 1)  
Non-repetitive peak off-state voltage, (note 1)  
Repetitive peak reverse voltage, (note 1)  
Non-repetitive peak reverse voltage, (note 1)  
4000-4500  
4000-4500  
2500-3000  
2600-3100  
V
V
V
V
MAXIMUM  
LIMITS  
OTHER RATINGS  
UNITS  
IT(AV)M  
IT(AV)M  
IT(AV)M  
IT(RMS)  
IT(d.c.)  
ITSM  
Maximum average on-state current, Tsink=55°C, (note 2)  
Maximum average on-state current. Tsink=85°C, (note 2)  
Maximum average on-state current. Tsink=85°C, (note 3)  
Nominal RMS on-state current, Tsink=25°C, (note 2)  
D.C. on-state current, Tsink=25°C, (note 4)  
3708  
A
A
2516  
1498  
A
7364  
A
6275  
A
Peak non-repetitive surge tp=10ms, Vrm=60%VRRM, (note 5)  
Peak non-repetitive surge tp=10ms, Vrm10V, (note 5)  
I2t capacity for fusing tp=10ms, Vrm=60%VRRM, (note 5)  
I2t capacity for fusing tp=10ms, Vrm10V, (note 5)  
Single Shot  
50  
A
ITSM2  
55  
A
I2t  
12.50×106  
15.13×106  
1000  
A2s  
A2s  
I2t  
Repetitive (50Hz, 60s)  
Continuous (50Hz)  
500  
(di/dt)cr Critical rate of rise of on-state current (note 6)  
A/µs  
250  
VRGM  
PG(AV)  
PGM  
Peak reverse gate voltage  
Mean forward gate power  
Peak forward gate power  
Operating temperature range  
Storage temperature range  
5
V
4
W
W
°C  
°C  
50  
Tj op  
-40 to +125  
-40 to +150  
Tstg  
Notes:-  
1) De-rating factor of 0.13% per °C is applicable for Tj below 25°C.  
2) Double side cooled, single phase; 50Hz, 180° half-sinewave.  
3) Single side cooled, single phase; 50Hz, 180° half-sinewave.  
4) Double side cooled.  
5) Half-sinewave, 125°C Tj initial.  
6) VD=67% VDRM, IFG=2A, tr0.5µs, Tcase=125°C.  
Data Sheet. Types R3708FC40# to R3708FC45# Issue 4  
Page 1 of 12  
October, 2007  

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