Datasheet > R3636EC18L

R3636EC18L

更新时间： 2025-08-10 08:59:23

品牌	Logo	应用领域
力特 - LITTELFUSE		/
页数	文件大小	规格书
12页	463K
描述
Silicon Controlled Rectifier, 7168A I(T)RMS, 1800V V(DRM), 1800V V(RRM), 1 Element, 101A352, 3 PIN

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R3636EC18L 数据手册

Date:- 30 Mar, 2007

Data Sheet Issue:- 1

WESTCODE

An IXYS Company

Distributed Gate Thyristor

Types R3636EC16# to R3636EC20#

Absolute Maximum Ratings

MAXIMUM

LIMITS

1600-2000

1700-2100

VOLTAGE RATINGS (Note 1)

UNITS

V_DRM

V_DSM

V_RRM

V_RSM

Repetitive peak off-state voltage

Non-repetitive peak off-state voltage

Repetitive peak reverse voltage

Non-repetitive peak reverse voltage

MAXIMUM

LIMITS

OTHER RATINGS

UNITS

I_T(AV)

I_T(RMS)

I_T(d.c.)

I_TSM

I_TSM2

I²t

Maximum average on-state current, T_sink=55°C (note 2)

Maximum average on-state current. T_sink=85°C (note 2)

Maximum average on-state current. T_sink=85°C (note 3)

Nominal RMS on-state current, T_sink=25°C (note 2)

D.C. on-state current, T_sink=25°C (note 4)

Peak non-repetitive surge t_p=10ms, V_RM=0.6V_RRM(note 5)

Peak non-repetitive surge t_p=10ms, V_RM≤10V (note 5)

I²t capacity for fusing t_p=10ms, V_RM=0.6V_RRM(note 5)

I²t capacity for fusing t_p=10ms, V_RM≤10V (note 5)

Maximum rate of rise of on-state current (repetitive) (Note 6)

Maximum rate of rise of on-state current (non-repetitive) (Note 6)

Peak reverse gate voltage

3636

2501

1518

7168

6233

38.9

A²s

A/µs

42.7

7.57×10⁶

9.12×10⁶

500

I²t

di_T/dt

1000

V_RGM

P_G(AV)

P_GM

V_GD

Mean forward gate power

Peak forward gate power

Non-trigger gate voltage (Note 7)

0.25

T_{j op}

Operating temperature range

-40 to +125

-40 to +150

°C

T_stg

Storage temperature range

Notes:-

1) De-rating factor of 0.13% per °C is applicable for T_jbelow 25°C.

2) Double side cooled, single phase; 50Hz, 180° half-sinewave.

3) Single side cooled, single phase; 50Hz, 180° half-sinewave.

4) Double side cooled.

5) Half-sinewave, 125°C T_jinitial.

6) V_D=67% V_DRM, I_FG=2A, t_r≤0.5µs, T_case=125°C.

7) Rated V_DRM

Data Sheet. Types R3636EC16# to R3636EC20# Issue 1

Page 1 of 12

March, 2007

12 3 4 5 6 7...12

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与R3636EC18L相关器件

型号	品牌	获取价格	描述	数据表
R3636EC18M	LITTELFUSE	获取价格	Silicon Controlled Rectifier, 7168 A, 1800 V, SCR, 101A352, 3 PIN
R3636EC18N	LITTELFUSE	获取价格	Silicon Controlled Rectifier, 7168 A, 1800 V, SCR, 101A352, 3 PIN
R3636EC18R	LITTELFUSE	获取价格	Silicon Controlled Rectifier, 7168A I(T)RMS, 1800V V(DRM), 1800V V(RRM), 1 Element, 101A35
R3636EC18S	LITTELFUSE	获取价格	Silicon Controlled Rectifier, 7168A I(T)RMS, 1800V V(DRM), 1800V V(RRM), 1 Element, 101A35
R3636EC18T	LITTELFUSE	获取价格	Silicon Controlled Rectifier, 7168A I(T)RMS, 1800V V(DRM), 1800V V(RRM), 1 Element, 101A35
R3636EC20K	LITTELFUSE	获取价格	Silicon Controlled Rectifier, 7168A I(T)RMS, 2000V V(DRM), 2000V V(RRM), 1 Element, 101A35
R3636EC20L	LITTELFUSE	获取价格	Silicon Controlled Rectifier, 7168A I(T)RMS, 2000V V(DRM), 2000V V(RRM), 1 Element, 101A35
R3636EC20M	LITTELFUSE	获取价格	暂无描述
R3636EC20N	LITTELFUSE	获取价格	Silicon Controlled Rectifier, 7168A I(T)RMS, 2000V V(DRM), 2000V V(RRM), 1 Element, 101A35
R3636EC20R	LITTELFUSE	获取价格	Silicon Controlled Rectifier, 7168 A, 2000 V, SCR, 101A352, 3 PIN

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