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R3292 PDF预览

R3292

更新时间: 2024-11-19 22:24:47
品牌 Logo 应用领域
HAMAMATSU 光电
页数 文件大小 规格书
6页 78K
描述
POSITION-SENSITIVE PHOTOMULTIPLIER TUBES

R3292 数据手册

 浏览型号R3292的Datasheet PDF文件第2页浏览型号R3292的Datasheet PDF文件第3页浏览型号R3292的Datasheet PDF文件第4页浏览型号R3292的Datasheet PDF文件第5页浏览型号R3292的Datasheet PDF文件第6页 
POSITION-SENSITIVE  
PHOTOMULTIPLIER TUBES  
R3292 SERIES  
28 (X) + 28 (Y) Crossed Wire Anode,  
5 Inch Diameter, 12-Stage, Bialkali Photocathode, Head-On  
GENERAL  
Parameter  
Description/Value  
300 to 650  
420  
Bialkali  
100  
Borosilicate glass  
Plano-plano  
Proximity mesh  
12  
Unit  
nm  
nm  
mm dia.  
Spectral Response  
Wavelength of Maximum Response  
Material  
Minimum Effective Area  
Material  
Shape  
Structure  
Number of Stages  
Number of Wires  
Photocathode  
Window  
Dynode  
Anode  
28 (X) +28 (Y)  
MAXIMUM RATINGS (Absolute Maximum Values)  
Parameter  
Value  
1300  
-80 to +50  
Unit  
Vdc  
°C  
Supply Voltage  
Between Anode and Cathode  
Ambient Temperature  
CHARACTERISTICS (at 25°C)  
Parameter  
Luminous (2856K)  
Radiant at 420nm  
Blue (CS 5-58 filter)  
Quantum Efficiency at 420nm  
Luminous (2856K)  
Min.  
50  
5
Typ.  
80  
77  
9.0  
23  
Max.  
150  
Unit  
µA/lm  
mA/W  
µA/lm-b  
%
A/lm  
A/W  
Cathode Sensitivity  
10  
Anode Sensitivity  
Gain  
7.7 × 103  
1.25 × 105  
40  
Radiant at 420nm  
Anode Dark Current (after 30 min. storage in darkness)  
nA  
Figure 1: Position Signal Linearity  
100 TPMHB0562EA  
100 TPMHB0563EA  
80  
60  
40  
20  
80  
60  
40  
20  
0
0
10 20 30 40 50 60 70 80 90 100 110 120  
10 20 30 40 50 60 70 80 90 100 110 120  
X-AXIS (mm)  
Y-AXIS (mm)  
Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office.  
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are  
subject to change without notice. No patent rights are granted to any of the circuits described herein.  
1998 Hamamatsu Photonics K.K.  
©

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