PHOTOMULTIPLIER TUBE
R329-02
For Scintillation Counting, Fast Time Response
51 mm (2 Inch) Diameter, Bialkali Photocathode, 12-stage Head-on Type
GENERAL
Parameter
Description / Value
300 to 650
Unit
nm
nm
—
mm
—
—
—
—
Spectral Response
Wavelength of Maximum Response
420
Bialkali
MateriaI
Minimum Effective Area
Material
Shape
Structure
Number of Stages
Photocathode
46
Borosilicate glass
Plano-concave
Linear focused
12
Window
Dynode
Operating Ambient Temperature
Storage Temperature
Base
-30 to +50
-80 to +50
21-pin glass base
E678-21C (supplied)
°C
°C
—
Suitable Socket
—
MAXIMUM RATINGS (Absolute Maximum Values)
Parameter
Value
2700
0.2
Unit
V
mA
Supply Voltage
Between Anode and Cathode
Average Anode Current
CHARACTERISTICS (at 25 °C)
Parameter
Min.
60
—
—
30
—
—
—
—
—
—
—
—
Typ.
90
10.5
85
Max.
—
—
—
—
—
—
40
—
—
Unit
µA/lm
—
mA/W
A/lm
A/W
—
nA
ns
ns
ns
Luminous (2856 K)
Cathode Sensitivity
Blue Sensitivity Index (CS 5-58)
Radiant at 420 nm
Luminous (2856 K)
Radiant at 420 nm
100
Anode Sensitivity
Gain
9.4 × 104
1.1 × 106
6.0
Anode Dark Current (after 30 min storage in darkness)
Anode Pulse Rise Time
2.6
48
1.1
100
Time Response
Electron Transit Time
Transit Time Spread (T.T.S.)
at 2 % Deviation
—
—
—
mA
mA
Pulse Linearity
at 5 % Deviation
200
VOLTAGE DISTRIBUTION RATIO AND SUPPLY VOLTAGE
Electrodes
K
G
Dy1 Dy2 Dy3 Dy4 Dy5 Dy6 Dy7 Dy8 Dy9 Dy10 Dy11 Dy12
P
Ratio
4
0
1
1.4 1
1
1
1
1
1
1
1
1
1
Supply Voltage: 1500Vdc, K: Cathode, Dy: Dynode, P: Anode, G: Grid
The shield pin should be connected to Dy5.
*
SPECIAL VOLTAGE DISTRIBUTION RATIO FOR PULSE LINEARITY MEASUREMENTS
Electrodes
K
G
Dy1 Dy2 Dy3 Dy4 Dy5 Dy6 Dy7 Dy8 Dy9 Dy10 Dy11 Dy12
P
Ratio
4.3
0
1
1.6 1.2 1.5 2.4 3.9 3
1
1
1
2
3
Supply Voltage: 2000 Vdc, K: Cathode, Dy: Dynode, P: Anode, G:Grid
Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult with our sales office.
Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications are
subject to change without notice. No patent rights are granted to any of the circuits described herein. ©2010 Hamamatsu Photonics K.K.