5秒后页面跳转
捷配首页

Datasheet > R325CH14FG7
R325CH14FG7 PDF预览

R325CH14FG7

更新时间： 2024-11-21 09:39:15
品牌 Logo 应用领域
IXYS /
页数 文件大小 规格书
12页 282K
描述
Silicon Controlled Rectifier, 2398 A, 1400 V, SCR

阅读下载

中文翻译

获取价格

R325CH14FG7 数据手册

 浏览型号R325CH14FG7的Datasheet PDF文件第2页浏览型号R325CH14FG7的Datasheet PDF文件第3页浏览型号R325CH14FG7的Datasheet PDF文件第4页浏览型号R325CH14FG7的Datasheet PDF文件第5页浏览型号R325CH14FG7的Datasheet PDF文件第6页浏览型号R325CH14FG7的Datasheet PDF文件第7页 
Date:- 21 Dec, 2000  
Data Sheet Issue:- 1  
WESTCODE  
Distributed Gate Thyristor  
Types R325CH02 to R325CH14  
Absolute Maximum Ratings  
MAXIMUM  
LIMITS  
VOLTAGE RATINGS  
UNITS  
VDRM  
VDSM  
VRRM  
VRSM  
Repetitive peak off-state voltage, (note 1)  
Non-repetitive peak off-state voltage, (note 1)  
Repetitive peak reverse voltage, (note 1)  
Non-repetitive peak reverse voltage, (note 1)  
200-1400  
V
V
V
V
200-1400  
200-1400  
300-1500  
MAXIMUM  
LIMITS  
1178  
OTHER RATINGS  
UNITS  
IT(AV)  
IT(AV)  
IT(AV)  
IT(RMS)  
IT(d.c.)  
ITSM  
ITSM2  
I2t  
Mean on-state current, Tsink=55°C, (note 2)  
Mean on-state current. Tsink=85°C, (note 2)  
Mean on-state current. Tsink=85°C, (note 3)  
Nominal RMS on-state current, Tsink=25°C, (note 2)  
D.C. on-state current, Tsink=25°C, (note 4)  
A
A
767  
433  
A
2395  
892  
A
A
Peak non-repetitive surge tp=10ms, VRM=0.6VRRM, (note 5)  
17  
kA  
kA  
A2s  
A2s  
A/µs  
A/µs  
V
≤
18.7  
Peak non-repetitive surge tp=10ms, VRM 10V, (note 5)  
I2t capacity for fusing tp=10ms, VRM=0.6VRRM, (note 5)  
I2t capacity for fusing tp=10ms, VRM 10V, (note 5)  
1.45×106  
1.75×106  
1000  
1500  
5
I2t  
≤
Maximum rate of rise of on-state current (repetitive), (Note 6)  
Maximum rate of rise of on-state current (non-repetitive), (Note 6)  
Peak reverse gate voltage  
diT/dt  
VRGM  
PG(AV)  
PGM  
VGD  
Mean forward gate power  
2
W
Peak forward gate power  
30  
W
Non-trigger gate voltage, (Note 7)  
Operating temperature range  
0.25  
V
THS  
-40 to +125  
-40 to +150  
°C  
°C  
Tstg  
Storage temperature range  
Notes:-  
1) De-rating factor of 0.13% per °C is applicable for Tj below 25°C.  
2) Double side cooled, single phase; 50Hz, 180° half-sinewave.  
3) Single side cooled, single phase; 50Hz, 180° half-sinewave.  
4) Double side cooled.  
5) Half-sinewave, 125°C Tj initial.  
≤
6) VD=67% VDRM, IFG=2A, tr 0.5µs, Tcase=125°C.  
7) Rated VDRM  
.
Data Sheet. Types R325CH02 to R325CH14 Issue 1  
Page 1 of 12  
December, 2000  
1234567...12

中文翻译

下载PDF

与R325CH14FG7相关器件

型号 品牌 获取价格 描述 数据表
R325CH14FG8 IXYS

获取价格

 		Silicon Controlled Rectifier, 2398A I(T)RMS, 1400V V(DRM), 1120V V(RRM), 1 Element
R325CH14FG9 IXYS

获取价格

 		Silicon Controlled Rectifier, 2398A I(T)RMS, 1400V V(DRM), 1260V V(RRM), 1 Element
R325CH14FGO IXYS

获取价格

 		Silicon Controlled Rectifier, 1852.6 A, 1400 V, SCR
R325CH14FH IXYS

获取价格

 		Silicon Controlled Rectifier, 2398A I(T)RMS, 1520000mA I(T), 1400V V(DRM), 1400V V(RRM), 1
R325CH14FH0 IXYS

获取价格

 		Silicon Controlled Rectifier, 1520000mA I(T), 1400V V(DRM)
R325CH14FH3 IXYS

获取价格

 		Silicon Controlled Rectifier, 2398 A, 1400 V, SCR
R325CH14FH4 IXYS

获取价格

 		Silicon Controlled Rectifier, 2398 A, 1400 V, SCR
R325CH14FH5 IXYS

获取价格

 		Silicon Controlled Rectifier, 2398A I(T)RMS, 1400V V(DRM), 700V V(RRM), 1 Element
R325CH14FH6 IXYS

获取价格

 		Silicon Controlled Rectifier, 2398A I(T)RMS, 1400V V(DRM), 840V V(RRM), 1 Element
R325CH14FH7 IXYS

获取价格

 		Silicon Controlled Rectifier, 2398A I(T)RMS, 892000mA I(T), 1400V V(DRM), 980V V(RRM), 1 E

与R325CH14FG7相关文章

您还可以找


热门产品
PCB打样/小批量
铝基板
BOM智能配单
PCBA制造
钣金
精密CNC
模具注塑
薄膜开关
精选活动
PCBA打样特惠
四六层板品质升级
铝基板品质升级
一体化电子制造
DFM下载
服务支持
企业认证
产品展示
工厂展示
工艺能力
积分商城
关于捷配
捷配简介
企业文化
公司动态
人才招聘
联系我们
帮助中心
下单流程
付款流程
开票流程
常见问题
全球PCB制造服务专线 400-613-0088

工作时间：9:00-21:00

CEO邮箱：ceo@jiepei.com

投诉邮箱：tousu@jiepei.com

捷配网-微信公众号 微信公众号
捷配网-微信公众号 抖音公众号
资质认证：
合作快递：
支付方式：
Copyright © 2024 Jiepei.com Inc. All Rights Reserved. 版权所有:杭州捷配信息科技有限公司 浙公网安备 33010502006866号 浙ICP备10014259号-119 营业执照ICP证