Datasheet > R3047TC26K

R3047TC26K

更新时间： 2024-02-04 04:38:37

品牌	Logo	应用领域
力特 - LITTELFUSE		栅栅极
页数	文件大小	规格书
12页	390K
描述
Silicon Controlled Rectifier, 6094A I(T)RMS, 5097000mA I(T), 2600V V(DRM), 2600V V(RRM), 1 Element, 101A325, 3 PIN

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中文翻译

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技术参数
数据手册

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R3047TC26K 技术参数

生命周期：	Active	包装说明：	,
Reach Compliance Code：	unknown	风险等级：	5.69
Base Number Matches：	1

R3047TC26K 数据手册

Date:- 25 May, 2001

Data Sheet Issue:- 2

WESTCODE

Provisional Data

Distributed Gate Thyristor

Types R3047TC24x to R3047TC28x

Absolute Maximum Ratings

MAXIMUM

LIMITS

VOLTAGE RATINGS

UNITS

(Note 1)

V_DRM

V_DSM

V_RRM

V_RSM

Repetitive peak off-state voltage

Non-repetitive peak off-state voltage

Repetitive peak reverse voltage

Non-repetitive peak reverse voltage

2400-2800

2500-2900

MAXIMUM

LIMITS

3047

OTHER RATINGS

UNITS

I_T(AV)

I_T(RMS)

I_T(d.c.)

I_TSM

I_TSM2

I²t

Mean on-state current, T_sink=55°C (note 2)

Mean on-state current. T_sink=85°C (note 2)

Mean on-state current. T_sink=85°C (note 3)

Nominal RMS on-state current, T_sink=25°C (note 2)

D.C. on-state current, T_sink=25°C (note 4)

2043

1196

6094

5097

Peak non-repetitive surge t_p=10ms, V_RM=0.6V_RRM(note 5)

A²s

A/µs

≤

Peak non-repetitive surge t_p=10ms, V_RM10V (note 5)

I²t capacity for fusing t_p=10ms, V_RM=0.6V_RRM(note 5)

12.5×10⁶

15.1×10⁶

500

I²t

≤

I²t capacity for fusing t_p=10ms, V_RM10V (note 5)

Maximum rate of rise of on-state current (repetitive) (Note 6)

Maximum rate of rise of on-state current (non-repetitive) (Note 6)

Peak reverse gate voltage

Mean forward gate power

Peak forward gate power

di_T/dt

1000

0.25

V_RGM

P_G(AV)

P_GM

V_GD

Non-trigger gate voltage (Note 7)

T_HS

T_stg

Operating temperature range

Storage temperature range

-40 to +125

-40 to +150

°C

Notes:-

1) De-rating factor of 0.13% per °C is applicable for T_jbelow 25°C.

2) Double side cooled, single phase; 50Hz, 180° half-sinewave.

3) Single side cooled, single phase; 50Hz, 180° half-sinewave.

4) Double side cooled.

5) Half-sinewave, 125°C T_jinitial.

≤

6) V_D=67% V_DRM, I_FG=2A, t_r0.5µs, T_case=125°C.

7) Rated V_DRM

Provisional Data Sheet. Types R3047TC24x-28x Issue 2

Page 1 of 12

May, 2001

12 3 4 5 6 7...12

中文翻译

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与R3047TC26K相关器件

型号	品牌	获取价格	描述	数据表
R3047TC26L	LITTELFUSE	获取价格	Silicon Controlled Rectifier, 6094A I(T)RMS, 5097000mA I(T), 2600V V(DRM), 2600V V(RRM), 1
R3047TC26N	LITTELFUSE	获取价格	Silicon Controlled Rectifier, 6094 A, 2600 V, SCR, 101A325, 3 PIN
R3047TC28K	IXYS	获取价格	Silicon Controlled Rectifier, 6094A I(T)RMS, 5097000mA I(T), 2800V V(DRM), 2800V V(RRM), 1
R3047TC28K	LITTELFUSE	获取价格	Silicon Controlled Rectifier, 6094A I(T)RMS, 5097000mA I(T), 2800V V(DRM), 2800V V(RRM), 1
R3047TC28M	IXYS	获取价格	Silicon Controlled Rectifier, 6094A I(T)RMS, 5097000mA I(T), 2800V V(DRM), 2800V V(RRM), 1
R3047TC28M	LITTELFUSE	获取价格	Silicon Controlled Rectifier, 6094A I(T)RMS, 5097000mA I(T), 2800V V(DRM), 2800V V(RRM), 1
R3047TC28N	IXYS	获取价格	Silicon Controlled Rectifier, 6094A I(T)RMS, 5097000mA I(T), 2800V V(DRM), 2800V V(RRM), 1
R3047TC28N	LITTELFUSE	获取价格	Silicon Controlled Rectifier, 6094A I(T)RMS, 5097000mA I(T), 2800V V(DRM), 2800V V(RRM), 1
R30480	MICROSEMI	获取价格	Silicon Power Rectifier
R30480E3	MICROSEMI	获取价格	Rectifier Diode, 1 Phase, 1 Element, 40A, 800V V(RRM), Silicon, DO-203AB, METAL, DO-5, 1 P

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